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quality Infrared detector LITEON LTR-3208E featuring special dark plastic package for remote control and alarm factory
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quality Infrared detector LITEON LTR-3208E featuring special dark plastic package for remote control and alarm factory
>
Specifications
Current - Collector(Ic):
3.12mA
Collector - Emitter Voltage VCEO:
30V
Current - Dark(Id):
100nA
Peak Wavelength:
940nm
Viewing Angle:
-
Operating Temperature:
-40℃~+85℃
Mfr. Part #:
LTR-3208E
Package:
Through Hole
Key Attributes
Model Number: LTR-3208E
Product Description

Product Overview

The Lite-On LTR-3208E is a phototransistor designed for infrared applications. It features a special dark plastic package that effectively cuts visible light, ensuring high sensitivity for detecting infrared signals. This component is suitable for a wide range of applications including remote controllers, IR wireless data transmission, and security alarms. Lite-On offers a comprehensive line of discrete infrared components to meet diverse market needs.

Product Attributes

  • Brand: LITE-ON
  • Origin: Taiwan, R.O.C.
  • Product Type: Infrared Detector (Phototransistor)
  • Package Material: Special dark plastic
  • Visible Light Cutoff: Yes
  • Sensitivity: High

Technical Specifications

Parameter Symbol Min. Typ. Max. Unit Test Condition Bin No
Collector-Emitter Breakdown Voltage V(BR)CEO 30 V IC = 1mA, Ee = 0mW/cm
Emitter-Collector Breakdown Voltage V(BR)ECO 5 V IE = 100A, Ee = 0mW/cm
Collector Emitter Saturation Voltage VCE(SAT) 0.1 0.4 V IC = 100A, Ee = 1mW/cm
Rise Time Tr 10 S Vcc=5V, Ic=1mA, RL = 1K
Fall Time Tf 15 S Vcc=5V, Ic=1mA, RL = 1K
Collector Dark Current Iceo 100 nA VCE = 10V, Ee = 0mW/cm
On State Collector Current IC(ON) 0.64 1.68 mA VCE = 5V, Ee = 1mW/Cm, =940nm BIN A
On State Collector Current IC(ON) 1.12 2.16 mA VCE = 5V, Ee = 1mW/Cm, =940nm BIN B
On State Collector Current IC(ON) 1.44 2.64 mA VCE = 5V, Ee = 1mW/Cm, =940nm BIN C
On State Collector Current IC(ON) 1.76 3.12 mA VCE = 5V, Ee = 1mW/Cm, =940nm BIN D
On State Collector Current IC(ON) 2.08 3.60 mA VCE = 5V, Ee = 1mW/Cm, =940nm BIN E
On State Collector Current IC(ON) 2.40 mA VCE = 5V, Ee = 1mW/Cm, =940nm BIN F
Power Dissipation 100 mw TA=25
Collector-Emitter Voltage 30 V TA=25
Emitter-Collector Voltage 5 V TA=25
Operating Temperature Range -40 85
Storage Temperature Range -55 100
Lead Soldering Temperature [1.6mm(.063") From Body] 260 for 5 Seconds

2412031549_LITEON-LTR-3208E_C6657890.pdf

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