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Specifications
Standby Current:
-
working temperature:
-40℃~+105℃
Current Range:
±500mA
Voltage - Supply:
4.75V~5.25V
Response Time (tr):
50us
Sensitivity:
4V/A
Bidirectional Current Detection:
Support
Mfr. Part #:
CTSR 0.3-P
Package:
Through Hole,45x17.9mm
Key Attributes
Model Number:
CTSR 0.3-P
Product Description
Product Overview
The LEM CTSR series are closed-loop voltage output current transducers designed for the electronic measurement of DC, AC, and pulsed currents with galvanic separation. They offer high accuracy, low offset drift, a wide aperture, and high overload and insulation capabilities. These transducers are suitable for PCB mounting and feature a reference pin with dual modes (Ref In/Ref Out) and degauss/test functions.
Product Attributes
- Brand: LEM
- Certifications: EN 50178, IEC 61010-1, UL 508, CSA C22.2 NO. 14-10
- Application Domain: Industrial
- Suitable for: VDE 0126-1-1 and UL 1741
Technical Specifications
| Model | Parameter | Symbol | Unit | Value | Comment |
| CTSR Series (General) | Primary nominal residual rms current | IPRN | mA | 300, 600 | |
| Primary residual current, measuring range | IPRM | mA | -500 to 500 (0.3-P), -850 to 850 (0.6-P) | ||
| Supply voltage | UC | V | 4.75 to 5.25 | +5 V nominal | |
| Max surrounding air temperature | TA | C | 105 | ||
| Primary conductor temperature | TB | C | 110 | ||
| Overload capability (100 s, 500 A/s) | P | A | 3300 | ||
| CTSR 0.3-P | Theoretical sensitivity | Gth | V/A | 4 | |
| Sensitivity error | G | % | -1.6 to 0.5 to 1.6 | RL > 500 k | |
| Linearity error | L | % of IPRM | 0.5 | ||
| Output rms noise voltage (spectral density) | Vno | mV | 6 | 1 .. 10 kHz referred to primary, RL > 500 k | |
| Reaction time @ 10 % of IPRN | tra | s | 7 | RL > 500 k, di/dt > 5 A/s | |
| Step response time to 90 % of IPN | tr | s | 50 | RL > 500 k, di/dt > 5 A/s | |
| CTSR 0.6-P | Theoretical sensitivity | Gth | V/A | 2.476 | |
| Sensitivity error | G | % | -0.7 to 0.3 to 0.7 | RL > 500 k | |
| Linearity error | L | % of IPRM | 0.4 | ||
| Output rms noise voltage (spectral density) | Vno | mV | 4 | 1 .. 10 kHz referred to primary, RL > 500 k | |
| Reaction time @ 10 % of IPRN | tra | s | 5 | RL > 500 k, di/dt > 5 A/s | |
| Step response time to 90 % of IPN | tr | s | 30 | RL > 500 k, di/dt > 5 A/s | |
| Insulation | Impulse withstand voltage 1.2/50 s | W | kV | 10.1 | |
| Clearance (pri. - sec.) | dCI | mm | 11 | Shortest distance through air | |
| Creepage distance (pri. - sec.) | dCp | mm | 11 | Shortest path along device body | |
| Comparative tracking index | CTI | V | 600 | ||
| Environmental | Ambient operating temperature | TA | C | -40 to 105 | |
| Ambient storage temperature | TS | C | -50 to 105 |
2410311225_LEM-CTSR-0-3-P_C3684439.pdf
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