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Specifications
working temperature:
-40℃~+85℃
Current Range:
6A
Voltage - Supply:
5V
Sensitivity:
104.16mV/A
Mfr. Part #:
LTS6-NP
Package:
Through Hole
Key Attributes
Model Number:
LTS6-NP
Product Description
Product Overview
The LEM LTS 6-NP is a closed-loop current transducer utilizing Hall effect technology for the electronic measurement of DC, AC, pulsed, and mixed currents. It provides galvanic isolation between the primary and secondary circuits. Key advantages include excellent accuracy, very good linearity, low temperature drift, optimized response time, wide frequency bandwidth, no insertion losses, and high immunity to external interference. This transducer is suitable for various industrial applications such as AC variable speed drives, static converters, battery-supplied applications, and power supplies.
Product Attributes
- Brand: LEM
- Certifications: EN 50178: 1997, IEC 60950-1: 2001, UL 94-V0
- Material: Isolated plastic case
Technical Specifications
| Parameter | Value | Unit | Notes |
| Electrical Data | |||
| Primary nominal current rms (IPN) | 6 | A | |
| Primary current, measuring range (IPM) | 0 .. 19.2 | A | |
| Overload capability (P) | 250 | A | |
| Output voltage (Analog) @ IP | 2.5 (0.625IP/IPN) | V | |
| Output voltage @ IP = 0 | 2.5 | V | 1) |
| Sensitivity (G) | 104.16 | mV/A | |
| Number of secondary turns (NS) | 2000 | 0.1 % | |
| Load resistance (RL) | 2 | kW | |
| Internal measuring resistance (RIM) | 208.33 | W | 0.5 % |
| Temperature coefficient of RIM (TCR IM) | < 50 | ppm/K | |
| Supply voltage (VC) | 5 | V | 5 % |
| Current consumption @ VC = 5 V | Typ 28+IS | mA | 2) |
| Accuracy @ IPN, TA = 25C | 0.2 | % | |
| Accuracy - Dynamic performance data with RIM @ IPN, TA = 25C | 0.7 | % | |
| Linearity error (L) | < 0.1 | % | Typ |
| Temperature coefficient of VOUT @ IP= 0 | 80 / 200 | ppm/K | - 10C .. + 85C / - 40C .. - 10C |
| Temperature coefficient of G (TCG) | 50 | ppm/K | 3) - 40C .. + 85C |
| Magnetic offset voltage @ IP = 0, after an overload of 3 x IPN | 0.5 | mV | |
| Magnetic offset voltage @ IP = 0, after an overload of 5 x IPN | 2.0 | mV | |
| Magnetic offset voltage @ IP = 0, after an overload of 10 x IPN | 2.0 | mV | |
| Reaction time @ 10 % of IPN (tra) | < 100 | ns | |
| Response time to 90 % of IPN step (tr) | < 400 | ns | |
| di/dt accurately followed | > 15 | A/s | |
| Frequency bandwidth (BW) (0 .. - 0.5 dB) | DC .. 100 | kHz | |
| Frequency bandwidth (BW) (DC .. 200 kHz) | (- 0.5.. 1 dB) | ||
| General Data | |||
| Ambient operating temperature (TA) | - 40 .. + 85 | C | |
| Ambient storage temperature (TS) | - 40.. + 100 | C | |
| Mass (m) | 10 | g | |
| Isolation Characteristics | |||
| Rms voltage for AC isolation test (Vd), 50 Hz, 1 min | 3 | kV | |
| Impulse withstand voltage (Vw) 1.2/50 s | > 8 | kV | |
| Rms voltage for partial discharge extinction (Ve) @ 10pC | > 1.5 | kV | |
| Creepage distance (dCp) | 15.5 | mm | 1) On housing |
| Clearance distance (dCI) | 6.35 | mm | 2) On PCB with soldering pattern UTEC93-703 |
| Comparative Tracking Index (CTI) (group IIIa) | 175 | ||
| Dimensions and Connections | |||
| Primary nominal current rms (IPN) | 6 | A | |
| Nominal output voltage VOUT [ V ] | 2.5 0.625 | V | |
| Primary resistance RP | 0.18 / 0.81 / 1.62 | mW | For 1, 2, 3 primary turns respectively |
| Primary insertion inductance LP | 0.013 / 0.05 / 0.12 | H | For 1, 2, 3 primary turns respectively |
2411271944_LEM-LTS6-NP_C454686.pdf
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