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quality Hall Effect Based Automotive Current Sensor LEM HAH1DR200-S with Excellent Linearity and Low Thermal Offset factory
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quality Hall Effect Based Automotive Current Sensor LEM HAH1DR200-S with Excellent Linearity and Low Thermal Offset factory
>
Specifications
working temperature:
-40℃~+125℃
Current Range:
200A
Voltage - Supply:
4.75V~5.25V
Sensitivity:
10mV/A
Mfr. Part #:
HAH1DR200-S
Key Attributes
Model Number: HAH1DR200-S
Product Description

HAH1DR 200-S Automotive Current Transducer

The HAH1DR family of open-loop current transducers utilizes Hall effect technology for the electronic measurement of DC, AC, or pulsed currents in high-power automotive applications. They provide galvanic separation between the primary and secondary circuits, offering various current measuring ranges within the same housing. Key advantages include excellent accuracy, very good linearity, low thermal offset and sensitivity drift, wide frequency bandwidth, and no insertion losses.

Product Attributes

  • Brand: LEM
  • Technology: Open Loop Hall Effect
  • Material (Case): PBT GF 30
  • Material (Magnetic Core): Iron silicon alloy
  • Electrical Terminal Coating: Brass tin plated
  • Connector Type: TYCO 1473672-1

Technical Specifications

ParameterSymbolUnitSpecificationConditionsMinTypicalMax
Absolute Maximum Ratings (Not Operating)
Primary current peakPmaxA1)7
Supply continuous over voltageUCV- 0.51
Reverse voltageV2)1 min @ TA = 25 C- 0.5
Ambient storage temperatureTSC- 55125
Electrostatic discharge voltageUESDkVJESD 22-A114-B (HBM)2
Continuous output currentIoutmA- 1010
RMS voltage for AC insulation test, 50 Hz, 1 minUdkV50 Hz, 1 min2
Continuous output over voltage (Analog)VoutV- 0.5UC + 0.5
Insulation resistanceRISM500 V - ISO 16750-2500
Output Short circuit durationtcminutes2
Operating Characteristics in Nominal Range (IPN)
Primary currentIPnA200
Supply voltageUCV4.7555.25
Ambient operating temperatureTACConnector limited 105 C- 40125
SensitivityGmV/A3)@ UC= 5 V10
Current consumptionICmA@ UC= 5 V, - 40 C < TA< 125 C1520
Load resistanceRLK10
Capacitive loadingCLnF1100
Output internal resistanceRoutDC to 1 kHz10
Ratiometricity errorr%0.5
Sensitivity errorG%@ TA= 25 C, @ I = IP- 1 0.51
Electrical offset currentIOEA@ TA= 25 C, @ UC= 5 V 0.6
Magnetic offset currentIOMA@ TA = 25 C, @ UC= 5 V, after IP 0.9
Global offset currentIOA@ TA = 25 C- 1.51.5
Average temperature coefficient of VOETCIOEAVmV/C@ - 40 C < TA< 125 C- 0.08 0.030.08
Average temperature coefficient of GTCGAV%/C@ - 40 C < TA< 125 C- 0.035 0.020.035
Linearity errorL%@ UC = 5 V, @ TA= 25 C, @ I= IP- 11
Step response time to 90 %trs@ di/dt = 100 A/s610
Frequency bandwidthBWkHz4)@ - 3 dB30
Output clamping voltage minimumVSZV@ UC = 5 V, @ TA= 25 C0.1
Output clamping voltage maximumV@ UC = 5 V, @ TA= 25 C4.9
Output voltage noise peak-peakVno p-pmVDC to 1 kHz22

Notes:
1) Busbar temperature must be below 150 C
2) Transducer not protected against reverse polarity
3) The output voltage Vout is fully ratiometric: The offset and sensitivity are dependent on the supply voltage UC relative to the following formula: Vout = (UC/5) (Vo + G IP )
4) Tested only with small signal only to avoid excessive heating of the magnetic core.

Automotive Applications

  • Battery monitoring
  • Starter Generators
  • Inverters
  • HEV application
  • EV application

2411261433_LEM-HAH1DR200-S_C454756.pdf

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