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quality Accurate electronic current sensor LEM HXS50-NP with Hall effect technology and multirange capability factory
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quality Accurate electronic current sensor LEM HXS50-NP with Hall effect technology and multirange capability factory
>
Specifications
Mfr. Part #:
HXS50-NP
Package:
Through Hole
Key Attributes
Model Number: HXS50-NP
Product Description

Product Overview

The LEM HXS 50-NP is a current transducer designed for the electronic measurement of DC, AC, and pulsed currents. It provides galvanic separation between the primary and secondary circuits, making it ideal for various industrial applications. Key features include a Hall effect measuring principle, multirange capability via PCB layout, low profile, single 5V power supply, and UL recognized insulating plastic case.

Product Attributes

  • Brand: LEM
  • Product Name: HXS 50-NP
  • Origin: Switzerland (implied by LEM International SA and Meyrin address)
  • Material: Insulating plastic case recognized according to UL 94-V0.
  • Certifications: UL recognized, EN 50178, EC 61010-1, UL 508

Technical Specifications

ParameterValueUnitNotes
Electrical Data
Primary nominal RMS current (IP N)50AFor HXS 50-NP model
Primary current, measuring range (IP M)±150A
Nominal sensitivity (SN)0.625V/A
Output voltage (Uout) @ IP N±(0.625·IP/ IP N)VAnalog output
Reference voltage (Uref)2.5 ±0.025VCan be overdriven with external voltage (1.5 - 2.8 V)
Output impedance (Rout)typ. 200
Load impedance (RL)200 kΩ
Load resistance2 kΩ
Output internal resistance< 5
Load capacitance (CL)4.7nF(±20 %)
Supply voltage (UC)5 ±5 %VMaximum supply voltage (not operating) < 6.5 V
Current consumption @ UC = 5 V19mA
Accuracy
Error @ IP N, TA = 25 °C±1%Excluding offset and magnetic offset voltage
Linearity error (0 ... IP N)±0.5%
Linearity error (0 ... 3 × IP N)±1%
Temperature coefficient of UO E (+25 ... 105 °C)±0.4mV/K
Temperature coefficient of UO E (−40 ... +25 °C)±0.525mV/K
Temperature coefficient of Uref (+25 ... 105 °C)±0.01%/K
Temperature coefficient of Uref (−40 ... +25 °C)±0.015%/K
Temperature coefficient of UO E /Uref±0.15mV/K
Temperature coefficient of S±0.05% of reading/K
Electrical offset voltage @ IP = 0, TA = 25 °C±0.0125V
Magnetic offset voltage @ IP = 0 after an overload of 3 × IPN±1%
Dynamic Performance Data
Delay time to 10 % of final output value (tD 10) for IP N step< 3µs
Delay time to 90 % of final output value (tD 90) for IP N step< 5µsFor di/dt = 50 A/µs
Output voltage noise (Uno) (DC ... 10 kHz)< 20mVpp
Output voltage noise (Uno) (DC ... 1 MHz)< 40mVpp
Frequency bandwidth (BW) (3 dB)DC ... 50kHzSmall signal only
General Data
Ambient operating temperature (TA)40 ... +105°CUL recognized until +85 °C
Ambient storage temperature (TA st)40 ... +105°C
Mass10g
Insulation Coordination
RMS voltage for AC insulation test (Ud)3.5kV50 Hz, 1 min
Creepage distance (dCp)7.48mm
Clearance (dCI)6.6mm
Comparative tracking index (CTI)> 600(group I)
Rated insulation voltage (EN 50178)600VBasic insulation
Rated insulation voltage (EN 50178)300VReinforced insulation
Nominal voltage (IEC 61010-1)600VBasic insulation
Nominal voltage (IEC 61010-1)150VReinforced insulation
Mechanical Characteristics
Primary resistance (RP)0.05mΩFor 1 primary turn
Primary insertion inductance (LP)0.025µHFor 1 primary turn

2411261433_LEM-HXS50-NP_C454698.pdf

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