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quality Hall Effect Current Sensor LEM LTSR6-NP Featuring Low Temperature Drift and Wide Frequency Bandwidth factory
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quality Hall Effect Current Sensor LEM LTSR6-NP Featuring Low Temperature Drift and Wide Frequency Bandwidth factory
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Specifications
Mfr. Part #:
LTSR6-NP
Package:
Through Hole
Key Attributes
Model Number: LTSR6-NP
Product Description

Overview

The LEM LTSR 6-NP is a closed-loop Hall effect current transducer designed for the electronic measurement of DC, AC, pulsed, and mixed currents. It provides galvanic isolation between the primary and secondary circuits, featuring a unipolar voltage supply, compact PCB mounting design, and an incorporated measuring resistance. This transducer offers excellent accuracy, very good linearity, low temperature drift, and a wide frequency bandwidth, making it suitable for industrial applications such as AC variable speed drives, static converters for DC motor drives, and uninterruptible power supplies.

Product Attributes

  • Brand: LEM
  • Model: LTSR 6-NP
  • Certifications: UL 94-V0, EN 50178, IEC 60950-1
  • Material: Isolated plastic case
  • Origin: Not specified
  • Color: Not specified

Technical Specifications

ParameterValueUnitNotes
Primary nominal current (IPN)6Arms
Primary current measuring range0 .. 19.2A1)
Overload capability (P)250A
Output voltage (VOUT) @ IP2.5 (0.625IP/IPN)V
Output voltage (VOUT) @ IP = 02.5V2)
Reference voltage (internal, RefOUT)2.5V3)
Reference voltage (external, RefIN)1.9 .. 2.7V4)
Sensitivity (G)104.16mV/A
Number of secondary turns (N S)2000 0.1 %
Load resistance (R L) 2kW
Max capacitive loading (C L max)500pF
Internal measuring resistance (R IM)208.33W 0.5 %
Temp. coefficient of R IM (TCR IM)< 50ppm/K
Supply voltage (VC)5V 5 %
Current consumption @ VC = 5 VTyp 28+ISmA5)
Accuracy @ IPN , TA = 25C 0.2%
Accuracy with R IM @ IPN , TA = 25C 0.7%
Linearity error (eL)< 0.1% Max
Temp. coefficient of VOUT /VREF @ IP = 0 (TCVOUT)150ppm/K- 40C .. + 85C
Temp. coefficient of G (TCG)50ppm/K6) - 40C .. + 85C
Magnetic offset voltage (VOM) @ IP = 0, after overload 7 / 8 / 10mV3x / 5x / 10x IPN
Temp. coefficient of internal VREF (TCVREF)50 / 100ppm/K10C .. + 85C / - 40C .. - 10C
Reaction time @ 10 % of IPN< 100ns
Response time to 90 % of IPN step< 400ns
di/dt accurately followed> 15A/s
Frequency bandwidth (0 .. - 0.5 dB)DC .. 100kHz
Frequency bandwidth (- 0.5 .. 1 dB)DC .. 200kHz
Ambient operating temperature (TA)- 40 .. + 85C
Ambient storage temperature (TS)- 40 .. + 100C
Mass10g
Rms voltage for AC isolation test (Vd)3kV50 Hz, 1 min
Impulse withstand voltage (Vw)> 8kV1.2/50 s
Rms voltage for partial discharge extinction (Ve)> 1.5kV10 pC Min
Creepage distance (dCp)15.35mmOn housing
Clearance distance (dCI)6.2mmOn PCB with soldering pattern UTEC93-703
Comparative Tracking Index (CTI)175Group IIIa

2410311332_LEM-LTSR6-NP_C454680.pdf

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