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Specifications
Mfr. Part #:
HAH1DRW200-S
Key Attributes
Model Number:
HAH1DRW200-S
Product Description
Product Overview
The LEM HAH1DRW family of open-loop current transducers utilizes Hall effect technology for electronic measurement of DC, AC, or pulsed currents in high-power, low-voltage automotive applications. They provide galvanic separation between the primary and secondary circuits and offer various current measuring ranges within the same housing. Key advantages include excellent accuracy, very good linearity, low thermal offset and sensitivity drift, galvanic separation, high frequency bandwidth, and a non-intrusive solution.
Product Attributes
- Brand: LEM
- Technology: Open Loop, Hall Effect
- Power Supply: Unipolar +5 V DC
- Primary Current Measuring Range: 200 A
- Operating Temperature Range: 40 C to 125 C
- Housing Material: PBT GF30
- Magnetic Core: FeSi wound core
- Mass: 57 g 5 %
- Pins: Brass tin plated
- IP Level: IPx2
- Connector Type: TYCO connector P/N 1473672-1
- Certifications: PLC3 (Comparative Tracking Index)
Technical Specifications
| Parameter | Symbol | Unit | Specification | Conditions |
| Absolute Ratings (not operating) | ||||
| Maximum supply voltage | UC | V | -0.5 to 8 | 1) Exceeding 6.5 V may temporarily reconfigure the device until next power on. |
| Ambient storage temperature | TS | C | -40 to 125 | |
| Electrostatic discharge voltage (HBM) | UESD | kV | 8 | |
| Maximum admissible vibration (random rms) | ms-2 | 96.6 | 10 to 2000 Hz, 40 C to 125 C | |
| Rms voltage for AC insulation test | Ud | kV | 2.5 | 50 Hz, 1 min |
| Creepage distance | dCp | mm | 5.2 | |
| Clearance | dCI | mm | 4.9 | |
| Comparative tracking index | CTI | PLC3 | ||
| Maximum output Current | Iout | mA | -10 to 10 | |
| Maximum output Voltage | Vout | V | -0.5 to UC + 0.5 | |
| Operating Characteristics in Nominal Range (IPN) | ||||
| Primary current, measuring range | IPM | A | -200 to 200 | |
| Primary nominal rms current | IPN | A | -200 to 200 | |
| Supply voltage | UC | V | 4.75 to 5.25 | |
| Ambient operating temperature | TA | C | -40 to 125 | |
| Output voltage (Analog) | Vout | V | Vout = (UC/5) (Vo + G IP ) | |
| Sensitivity | G | mV/A | 10 | @ TA = 25 C |
| Offset voltage | VO | V | 2.5 | |
| Current consumption | IC | mA | 20 to 25 | |
| Load resistance | RL | k | 10 | |
| Output internal resistance | Rout | 1 to 10 | ||
| Performance Data | ||||
| Ratiometricity error | r | % | 0.5 | |
| Sensitivity error | G | % | 0.6 | @ TA = 25 C, @ UC = 5 V |
| Electrical offset voltage | VOE | mV | 3 | @ TA = 25 C, @ UC = 5 V |
| Magnetic offset voltage | VOM | mV | 2 | @ UC = 5 V, @ TA = 25 C |
| Linearity error | L | % | -1 to 1 | % of full scale |
| Average temperature coefficient of VOE | TCVOEAV | mV/C | 0.04 | |
| Average temperature coefficient of G | TCGAV | %/C | 0.02 | |
| Step response time @ 70 % | tr | s | 2 to 6 | di/dt = 100 A / s |
| Frequency bandwidth | BW | kHz | 40 | @ 3 dB |
| Output voltage noise peak-peak | Vno pp | mV | 14 | DC to 1 MHz |
| Output rms voltage noise | Vno | mV | 2.2 | |
| Phase shift | -4 | DC to 1 KHz | ||
2411271935_LEM-HAH1DRW200-S_C454758.pdf
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