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quality Robust Hall Effect Switch with Direction Detection and Bipolar Technology Infineon TLE4966LHALA1 PG TSOP6 6 5 Package factory
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quality Robust Hall Effect Switch with Direction Detection and Bipolar Technology Infineon TLE4966LHALA1 PG TSOP6 6 5 Package factory
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Specifications
Operating Current:
5.2mA
Voltage - Supply:
2.7V~18V
Mfr. Part #:
TLE4966LHALA1
Package:
SSO-4
Key Attributes
Model Number: TLE4966LHALA1
Product Description

Product Overview

The TLE4966K is a high-precision Hall-effect switch with integrated direction detection capabilities, designed for demanding applications requiring accurate speed and rotational direction sensing. It operates across a wide supply voltage range (2.7 V to 24 V) and features high sensitivity and stable magnetic switching points due to active error compensation and chopper techniques. This bipolar sensor provides digital output signals for both speed (Q2) and direction (Q1), with the direction signal preceding the speed signal. Its robust design includes reverse battery protection, superior temperature stability, and resistance to mechanical stress, making it suitable for use in harsh environments. The device is available in a compact PG-TSOP6-6-5 SMD package.

Product Attributes

  • Brand: Infineon Technologies
  • Product Family: Hall-Effect Switch with Direction Detection
  • Package Type: PG-TSOP6-6-5
  • Technology: Bipolar Hall-Effect

Technical Specifications

Parameter Symbol Conditions Min. Typ. Max. Unit
Supply Voltage VS 2.7 - 24 V
Supply Voltage (Reverse Battery Protection) VS for 1 h, RS 200 -18 - - V
Supply Voltage (Reverse Battery Protection) VS for 5 min, RS 200 -18 - - V
Supply Current IS VS = 2.7 V ... 18 V 4 5.2 7 mA
Output Saturation Voltage VQSAT IQ = 10 mA - 0.3 0.6 V
Output Fall Time tf RL = 1.2 k; CL < 50 pF - 0.2 1 s
Output Rise Time tr RL = 1.2 k; CL < 50 pF - 0.2 1 s
Switching Frequency fSW 0 - 15 kHz
Delay Time td - 13 - s
Power-on Time tPON VS 2.7 V - 13 - s
Hall Plate Distance dHALL - 1.45 - mm
Operate Point BOP Tj = 25C 4.7 5.0 5.2 mT
Release Point BRP Tj = 25C -7.7 -7.5 -7.1 mT
Hysteresis BHYS Tj = 25C - 15.0 - mT
Magnetic Matching BMATCH Tj = 25C - 0 - mT
Magnetic Offset BOFF Tj = 25C - 0 - mT
Temperature Compensation of Magnetic Thresholds TC - -350 - ppm/C
Junction Temperature (Max. Continuous) Tj for 168 h -40 - 175 C
Junction Temperature (Peak) Tj for 3 x 1 h (additive) - - 195 C
Storage Temperature TS -40 - 150 C
ESD Voltage (HBM) VESD R = 1.5 k, C = 100 pF, TA = 25C - 4 - kV
Package Type PG-TSOP6-6-5

2411261521_Infineon-TLE4966LHALA1_C3716219.pdf

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