HX6701 High Sensitivity, Quasi-Zero Power Magnetoresistive Sensor
The HX6701 is a magnetic switch sensor integrating Tunnel Magnetoresistance (TMR) technology and CMOS technology. It offers high precision, high speed, low power consumption, and high sensitivity, making it suitable for magnetic switch detection in industrial and consumer electronics. The internal circuitry includes a voltage generator, comparator, digital logic control module, threshold trimming module, and CMOS output circuit. The HX6701 features a wide operating voltage and temperature range, providing all-pole magnetic response with extremely low current consumption. It detects magnetic fields parallel to the chip package surface. When the magnetic field strength exceeds the operating point (BOP), the switch outputs a low level; when the magnetic field strength falls below the release point (BRP), the switch outputs a high level. The HX6701 operates within a temperature range of -40 to 125 and a supply voltage range of 1.8V to 5.5V, with an average current consumption of only 0.16A. Available in SOT-23 and TO-92S packages, both compliant with halogen-free standards.
Features and Advantages
- Ultra-low power consumption: 0.16A @ 3.0V
- Wide operating voltage range: 1.8V~5.5V
- Ultra-high sensitivity: BOP = 7 Gs
- All-pole magnetic field detection
- CMOS push-pull output
- Operating temperature range: -40~125
- Excellent ESD performance: HBM 8KV
- RoHS compliant
Typical Applications
- Water meters, gas meters, flowmeters
- Non-contact detection
- Electronic locks, valve position detection
- Laptop and tablet switch detection
- TWS earphones, mobile phones
- Replacement for dry reed switches
Product Attributes
- Brand: HuaXin Tech
- Origin: Wuxi, China
- Certifications: Halogen-free, RoHS
Technical Specifications
| Parameter | Test Condition | Min | Typical | Max | Unit |
|---|---|---|---|---|---|
| Absolute Maximum Ratings (TA=25) | |||||
| Supply Voltage (VDD) | -0.3 | 6 | V | ||
| Output Voltage (VOUT) | 0 | 6 | V | ||
| Magnetic Field Threshold | Unlimited | Gauss | |||
| Output Current (IOUT) | 5 | mA | |||
| Operating Temperature (TA) | -40 | 125 | |||
| Storage Temperature (TS) | -55 | 165 | |||
| Electrostatic Discharge (ESD) | HBM | 8000 | V | ||
| Electrical Characteristics (TA=25, VDD=3.0V) | |||||
| Supply Voltage (VDD) | 1.8 | 5.5 | V | ||
| Supply Current (IDD) | Sleep Mode | 0.148 | A | ||
| Wake-up | 1.9 | A | |||
| Average | 0.16 | A | |||
| Output High Voltage (VOH) | IOUT = 1 mA (Source) | VDD-0.05 | VDD-0.015 | V | |
| Output Low Voltage (VOL) | IOUT = 1 mA (Sink) | 0.008 | 0.05 | V | |
| Output Leakage Current (IOFF) | Output off | 1.0 | A | ||
| Wake-up Time (TAW) | Operating | 40 | S | ||
| Sleep Time (TSL) | Operating | 20 | mS | ||
| Switching Point (BOP) | 4 | 7 | 10 | Gauss | |
| Release Point (BRP) | 1 | 4 | 7 | Gauss | |
| Hysteresis (BHYS) | |BOPx - BRPx| | 3 | Gauss | ||
2404161132_HUAXIN-HX6701KSO_C19725714.pdf
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