Product Overview
The TLE5041plusC is an iGMR-based wheel speed sensor designed for sophisticated vehicle control systems, including ABS, ESP, and indirect tire pressure monitoring systems (iTPMS). It accurately senses rotational speed using integrated giant magneto resistive (GMR) elements sensitive to magnetic field direction. The sensor offers excellent repeatability and sensitivity over a wide temperature range, with robust electrostatic discharge (ESD) and electromagnetic compatibility (EMC) performance. Its monolithic integration using BiCMOS technology eliminates the need for external components, providing a cost-effective and reliable solution for automotive applications.
Product Attributes
- Brand: Infineon Technologies AG
- Technology: Integrated Giant Magneto Resistive (iGMR)
- Package Type: PG-SSO-2-53
- Material: Pure tin plating (green lead plating)
- Certifications: Complies with RoHS when marked with 'G'
Technical Specifications
| Parameter | Notes / Test Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|
| Product Model | TLE5041plusC | ||||
| Package | PG-SSO-2-53 | ||||
| Supply Voltage (VDD) | Directly at the sensor pins | 4.5 | 20 | V | |
| Operating Junction Temperature (Tj) | limited to 10000 h | -40 | 125 | C | |
| Operating Junction Temperature (Tj) | limited to 5000 h | -40 | 150 | C | |
| Operating Junction Temperature (Tj) | limited to 2500 h | -40 | 160 | C | |
| Operating Junction Temperature (Tj) | limited to 500 h | -40 | 170 | C | |
| Magnetic Induction Amplitude (BX) | each GMR element | -75 | 75 | mT | |
| Differential Magnetic Induction (dBX) | -150 | 150 | mT | ||
| Supply Current (Initial) | initial state is low | 7 | 8.4 | mA | |
| Supply Current (Output Low) | 5.9 | 7 | 8.4 | mA | |
| Supply Current (Output High) | 11.8 | 14 | 16.8 | mA | |
| Output Current Slew Rate | RM = 75 | 8 | 24 | mA/s | |
| Power-on Time (tPOR) | 100 | s | |||
| Magnetic Edges for Correct Offset Calibration | 5th edge | 4 | |||
| Duty Cycle | dBX 2 mT | 40 | 50 | 60 | % |
| Period Jitter (Sjit1) | -10 C Tj 80 C, dBX 1 mT | 0.3 | % | ||
| Threshold Limit (dBLimit_X) | 0.1 | 0.18 | 0.3 | mT | |
| Start-up Threshold (dBStartup_X) | peak to peak value | 0.2 | 0.36 | 0.6 | mT |
| ESD Protection (HBM) | EIA/JESD22-A114-B | 12 | kV | ||
| ESD Protection (SDM) | ANSI/ESD SP5.3.2-2008 | 2 | kV | ||
| Package surface to silicon distance | d | 0.22 | 0.38 | mm |
2411271951_Infineon-TLE5041PLUSC_C3715880.pdf
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