Product Overview
The HXS21C is a current-output, latched Hall effect sensor based on a 60V BCD process platform, utilizing high-frequency chopping technology. It offers high magnetic field consistency and symmetry across its full operating voltage and temperature range. The integrated voltage regulator supports input voltages from 4V to 24V, making it suitable for industrial and automotive applications, while also providing strong electromagnetic interference (EMC) resistance and high reliability. The sensor incorporates dynamic offset cancellation and temperature compensation to minimize variations due to process, packaging, and thermal stress, ensuring stable sensitivity. It features an integrated voltage regulator, Hall array, amplifier, low-pass filter, hysteresis comparator, and output current control. The two-wire current output interface simplifies wiring and facilitates open/short circuit diagnostics. Available in 3-pin TO-92S (UA) and 3-pin SOT23-3L (SO) packages, both with 100% lead-free matte tin-plated leads.
Product Attributes
- Brand: HuaXin Tech
- Package Types: TO-92S (UA), SOT23-3L (SO)
- Lead Finish: 100% Lead-free matte tin-plated
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typical | Max | Unit | Notes |
| Thermal Resistance (Junction to Ambient) | Rja | UA package, single-layer PCB | 200 | /W | (1) | ||
| SO package, single-layer PCB | 300 | /W | (1) | ||||
| Power Supply Voltage Rating | VDD | Rs200, < 5 min | -28 | 60 | V | ||
| Operating Temperature | TA | -40 | 150 | ||||
| Maximum Junction Temperature | TJ | 168 hours | -55 | 165 | |||
| Storage Temperature | TSTG | -65 | 175 | ||||
| ESD Protection (HBM) | VESD_HBM | Human Body Model (HBM) per AEC-Q100-002 | -8 | 8 | KV | ESD-HBM test uses bare die. | |
| Operating Voltage | VDD | TJ < TJ(Max.) | 4 | 24 | V | (2) | |
| Reverse Voltage | VDDR | IDD < -10mA, TA=25 | -28 | - | V | ||
| High Undervoltage Lockout | UVLOH | B > BOP+2.0mT, VDD Rising From 1.5V | 1.95 | V | |||
| Low Undervoltage Lockout | UVLOL | B > BOP+2.0mT, VDD Decreasing From 2.5V | 1.75 | V | |||
| Undervoltage Lockout Hysteresis | UVLOHYS | UVLOH - UVLOL | 250 | mV | |||
| Low Operating Current | IDDL | VDD=4 to 24 V, TA=25 | 4 | mA | |||
| High Operating Current | IDDH | VDD=4 to 24 V, TA=25 | 26 | mA | |||
| Power-Up Output Valid Time | ton | VDD > 2.5V | 50 | 60 | s | ||
| Output Delay Time | td | B=BRP to BOP | 15 | 40 | s | ||
| Bandwidth | fBW | - | - | 20 | KHz | ||
| Switching Point (BOP) | BOP | HXS21CSO, TA=-40to 125 | +6.0 | +8.0 | +10.0 | mT(1) | (1) |
| HXS21CUA, TA=-40to 125 | -10.0 | -8.0 | -6.0 | mT(1) | (1) | ||
| Release Point (BRP) | BRP | HXS21CSO, TA=-40to 125 | -10.0 | -8.0(2) | -6.0 | mT(1) | (2) |
| HXS21CUA, TA=-40to 125 | 6.0 | 8.0 | 10.0 | mT(1) | (1) | ||
| Hysteresis (BHYS) | BHYS | TA=-40to 125 | 12.0 | 16.0 | 20.0 | mT | |
| TA=-40to 125 | 12.0 | 16.0 | 20.0 | mT | |||
| Magnetic Symmetry (BO) | BO | (BOP+BRP)/2, HXS21CSO | -2.0 | 0 | +2.0 | mT | |
| (BOP+BRP)/2, HXS21CUA | -2.0 | 0 | +2.0 | mT |
Notes:
(1) Maximum operating voltage must meet power dissipation and junction temperature requirements, refer to thermal characteristics.
(2) Test value at TA=+25C, VDD = 12V is typical.
(1) 1mT=10Gs
(2) Magnetic flux density B, North pole magnetic field is negative, South pole magnetic field is positive.
2506041705_HUAXIN-S21C_C49023401.pdf
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