Product Overview
The GH1120 is a Hall-effect latch designed in CMOS technology, featuring a wide operating voltage range (3.5V to 24V DC) and an extended temperature range (40 to +125). It includes an internal voltage regulator, Hall sensor with dynamic offset cancellation, Schmitt trigger, and an open-drain output driver. The device operates with a high magnetic sensitivity (Bhy=60 Gauss Typ.). Its output is "on" (Low) with no magnetic field and switches "off" (High) when the magnetic flux density exceeds the operate point (Bop), latching off until the flux density drops below the release point (Brp). This makes it suitable for applications requiring precise rotor position sensing, current switching, encoders, and RPM detection in automotive, industrial, and consumer electronics.
Product Attributes
- Brand: GOCHIP ELECTRONICS TECHNOLOGY (SHANGHAI) CO., LTD.
- Certifications: Lead Free Finish/RoHS Compliant
- Material: CMOS Technology
- Package Options: SIP-3L (TO-92S), SC59 (SOT-23-3L)
Technical Specifications
| Parameter | Description | Value | Unit |
|---|---|---|---|
| Output Sink Current | 25mA (Typ.) | 25 | mA |
| Operating Temperature | -40 to +125 | ||
| Operating Voltage | DC Operation Voltage | 3.5 to 24 | V |
| Magnetic Sensitivity (Hysteresis) | Bhy | 60 | Gauss (Typ.) |
| Supply Current (IDD) | Typical at VDD=12V, OUT "OFF" | 2.0 | mA |
| Output Saturation Voltage (VO(SAT)) | Typical at VDD=12V, OUT "ON", Io=10mA | 300 | mV |
| Output Saturation Voltage (VO(SAT)) | Typical at VDD=12V, OUT "ON", Io=20mA | 500 | mV |
| Output Leakage Current (ILE) | Released | 10 | A |
| Rise Time | RL=820, CL=20pF | 0.45 | S |
| Fall Time | RL=820, CL=20pF | 0.45 | S |
| Maximum Switching Frequency | 90 | KHz | |
| Operation Point (Bop) | 80 | Gauss | |
| Release Point (Brp) | 5 | Gauss | |
| Hysteresis (Bhy) | 60 | Gauss | |
| Power Dissipation | SIP-3L | 450 | mW |
| Power Dissipation | SC59 | 230 | mW |
1811061518_GoChip-Elec-Tech--Shanghai-GH1120KSE_C266229.pdf
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