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quality Diodes ah1809 p b micropower omnipolar hall effect switch ic designed for battery operated equipment factory
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quality Diodes ah1809 p b micropower omnipolar hall effect switch ic designed for battery operated equipment factory
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Specifications
Operating Current:
8uA
Operating Temperature:
-40℃~+125℃
Voltage - Supply:
2.5V~5.5V
Magnetic Field Range:
±18.5mT
Mfr. Part #:
AH1809-P-B
Package:
SIP-3
Key Attributes
Model Number: AH1809-P-B
Product Description

Product Overview

The AH1809 is a low sensitivity, micropower Omnipolar Hall Effect switch IC designed for battery-powered consumer products, home appliances, and industrial equipment such as smart e-meters. It offers a reliable solution over its operating range due to its two Hall Effect plates and chopper-stabilized architecture. Optimized for battery and low-power applications, it operates from a 2.5V to 5.5V supply and consumes only 24W at 3V. The single open-drain output switches on with either a North or South magnetic pole and turns off when the magnetic flux density falls below the release point. The output remains off in the absence of a magnetic field.

Product Attributes

  • Brand: Diodes Incorporated
  • Operation: Omnipolar (North or South pole)
  • Sensitivity: Low
  • Output Type: Single Open Drain
  • Power Consumption: Micropower Operation
  • Supply Voltage Range: 2.5V to 5.5V
  • Temperature Stability: Superior (Chopper Stabilized Design)
  • Noise Immunity: Good RF Noise Immunity
  • Operating Temperature: -40C to +125C
  • ESD Capability: High (6 kV HBM)
  • Packages: SC59, SOT553, SIP-3L
  • Compliance: Totally Lead-Free & Fully RoHS Compliant, Halogen and Antimony Free (Green Device)

Technical Specifications

ParameterConditionsMinTypMaxUnit
Electrical Characteristics
Supply Voltage (VDD)Operating2.5-5.5V
Output On Voltage (VOL)IOUT = 1mA-0.10.3V
Output Leakage CurrentVOUT = 5.5V, Output off-< 0.11A
Supply Current (IDD_awake)TA = +25C, VDD = 3V-36mA
Supply Current (IDD_awake)TA = -40 to +125C, VDD = 2.5V to 5.5V--12mA
Supply Current (IDD_sleep)TA = +25C, VDD = 3V-510A
Supply Current (IDD_sleep)TA = -40 to +125C, VDD = 2.5V to 5.5V--28A
Average Supply Current (IDD_avg)TA = +25C, VDD = 3V-816A
Average Supply Current (IDD_avg)TA = -40 to +125C, VDD = 2.5V to 5.5V--40A
Awake Time (Tawake)Note 8-75125s
Period (Tperiod)Note 8-75125ms
Magnetic Characteristics
Operation Point (Bops, South Pole)TA = +25C100130165Gauss
Operation Point (Bops, South Pole)TA = -40C to +125C90130185Gauss
Operation Point (Bopn, North Pole)TA = +25C-165-130-100Gauss
Operation Point (Bopn, North Pole)TA = -40C to +125C-185-130-90Gauss
Release Point (Brps, South Pole)TA = +25C90115150Gauss
Release Point (Brps, South Pole)TA = -40C to +125C80115170Gauss
Release Point (Brpn, North Pole)TA = +25C-150-115-90Gauss
Release Point (Brpn, North Pole)TA = -40C to +125C-170-115-80Gauss
Hysteresis (|Bopx|-|Brpx|)TA = +25C101520Gauss
Hysteresis (|Bopx|-|Brpx|)TA = -40C to +125C515-Gauss
Absolute Maximum Ratings
Supply Voltage (VDD)Note 7--7V
Output Pin Voltage (VOUT)Note 7--7V
Reverse Supply Voltage (VDD_REV)--0.3--V
Reverse Output Pin Voltage (VOUT_REV)--0.3--V
Output Current (IOUTPUT)Source and sink--2.5mA
Package Power Dissipation (PD)SC59 and SOT553--230mW
Package Power Dissipation (PD)SIP-3L--230mW
Storage Temperature Range (Ts)--65-+150C
Maximum Junction Temperature (TJ)---+150C
ESD Capability (HBM)Human Body Model--6kV

2412251152_DIODES-AH1809-P-B_C842169.pdf

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