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quality Consumption Omnipolar Hall Effect Sensor Switch DIODES AH180 PG B with Chopper Stabilized Architecture factory
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quality Consumption Omnipolar Hall Effect Sensor Switch DIODES AH180 PG B with Chopper Stabilized Architecture factory
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Specifications
Operating Current:
8uA
Operation Points:
±6mT
Release Points:
±1mT
Operating Temperature:
-40℃~+85℃
Voltage - Supply:
2.5V~5.5V
Mfr. Part #:
AH180-PG-B
Package:
SIP-3
Key Attributes
Model Number: AH180-PG-B
Product Description

AH180 MicroPower Omnipolar Hall-Effect Sensor Switch

The AH180 is a micro-power, omnipolar Hall-Effect switch designed for portable and battery-powered equipment such as cellular phones, PDAs, and portable PCs. It features a chopper-stabilized architecture for reliable operation across its operating range. Optimized for low power consumption (24W at 3V) and a wide supply voltage range (2.5V to 5.5V), the AH180's single open-drain output activates with either a north or south magnetic pole. It is available in SIP-3 (Ammo Pack), SIP-3 (Bulk Pack), and SC59 packages.

Product Attributes

  • Brand: Diodes Incorporated
  • Product Status: OBSOLETE PART DISCONTINUED
  • Omnipolar Operation (North or South pole)
  • Micropower Operation
  • Single Open Drain Output
  • 2.5V to 5.5V Operating Voltage
  • Chopper Stabilized Design
  • Superior Temperature Stability
  • Minimal Switch-Point Drift
  • Enhanced Immunity to Stress
  • Good RF Noise Immunity
  • -40C to +85C Operating Temperature
  • ESD (HBM) > 6kV
  • Totally Lead-Free & Fully RoHS Compliant
  • Halogen and Antimony Free. Green Device

Technical Specifications

ParameterConditionsMinTypMaxUnit
Absolute Maximum Ratings
Vdd Supply Voltage7V
B Magnetic Flux DensityUnlimited
TS Storage Temperature Range-65+150C
PD Package Power DissipationSIP-3 (Ammo Pack), SIP-3 (Bulk Pack)550mW
PD Package Power DissipationSC59230mW
TJ Maximum Junction Temperature+150C
Recommended Operating Conditions
Vdd Supply VoltageOperating2.55.5V
TA Operating Ambient TemperatureOperating-40+85C
Electrical Characteristics (TA = +25C, Vdd = 3V; unless otherwise specified.)
VOUT Output On VoltageIOUT =1mA0.10.3V
IOFF Output Leakage CurrentVOUT =5.5V, Output off<0.11A
Idd(en) Supply CurrentChip enable, TA = +25C, Vdd = 3V36mA
Idd(en) Supply CurrentChip enable, TA = -40 to +85C, Vdd = 2.5V to 5.5V39mA
Idd(dis) Supply CurrentChip disable, TA = +25C, Vdd = 3V510A
Idd(dis) Supply CurrentChip disable, TA = -40 to +85C, Vdd = 2.5V to 5.5V515A
Idd(avg) Average supply currentTA = +25C, Vdd = 3V816A
Idd(avg) Average supply currentTA = -40 to +85C, Vdd = 2.5V to 5.5V824A
tAWAKE Awake Time (Note 5)75125s
tPERIOD Period (Note 5)75125ms
D.C. Duty Cycle0.1%
Magnetic Characteristics (TA = +25C, Vdd = 3V, Notes 6 & 7) (1mT=10 Gauss)
Bops (South Pole to Brand Side) Operation Point4060Gauss
Bopn (North Pole to Brand Side)-60-40Gauss
Brps (South Pole to Brand Side) Release Point1030Gauss
Brpn (North Pole to Brand Side)-30-10Gauss
Bhy (|Bopx|-|Brpx|) Hysteresis15Gauss

2412251055_DIODES-AH180-PG-B_C443886.pdf

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