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quality Isolated current sensor CHIPSENSE AN3V 32 PB30 with compact height and wide current measurement range factory
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quality Isolated current sensor CHIPSENSE AN3V 32 PB30 with compact height and wide current measurement range factory
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Specifications
working temperature:
-40℃~+105℃
Current Range:
±80A
Voltage - Supply:
3.3V
Current Terminal Resistance:
0.21mΩ
Band Width:
250kHz
Response Time (tr):
2.5us
Sensitivity:
14.375mV/A
Bidirectional Current Detection:
Support
Mfr. Part #:
AN3V 32 PB30
Package:
Through Hole
Key Attributes
Model Number: AN3V 32 PB30
Product Description

AN3V PB30 Series Current Sensors

The AN3V PB30 series are open-loop Hall effect current sensors designed for measuring DC, AC, and pulse currents. They feature isolation between the primary and secondary sides, no insertion loss, and a compact design with a height of 8.7mm. These sensors are suitable for various industrial applications, including variable frequency drives, servo drivers, DC motor drivers, UPS, module power supplies, SMPS, busbars, and MPPT systems. They comply with IEC 60664-1:2020, IEC 61800-5-1:2022, and IEC 62109-1:2010 standards.

Product Attributes

  • Brand: (Chipsensor)
  • Principle: Hall effect, open-loop
  • Isolation: Primary and secondary sides
  • Materials: Compliant with UL 94-V0
  • Certifications: IEC 60664-1, IEC 61800-5-1, IEC 62109-1

Technical Specifications

Product Model Primary Rated Current (IPN) Primary Current Measurement Range (IPM) Supply Voltage (VC) Current Consumption (IC) Output Bandwidth (-3dB) (BW) Output Noise (Vno) Accuracy @ IPN Accuracy @ IPN (TA=-40~105)
AN3V 10 PB30 -10 to 10 A -25 to 25 A 3.135 - 3.3 - 3.465 V 6.5 - 11 mA 250 kHz 4.8 mVRMS -1 to 1 % of IPN -2.5 to 2.5 % of IPN
AN3V 16 PB30 -16 to 16 A -40 to 40 A 3.135 - 3.3 - 3.465 V 6.5 - 11 mA 250 kHz 3 mVRMS -1 to 1 % of IPN -2.5 to 2.5 % of IPN
AN3V 20 PB30 -20 to 20 A -50 to 50 A 3.135 - 3.3 - 3.465 V 6.5 - 11 mA 250 kHz 2 mVRMS -1 to 1 % of IPN -2.5 to 2.5 % of IPN
AN3V 32 PB30 -32 to 32 A -80 to 80 A 3.135 - 3.3 - 3.465 V 6.5 - 11 mA 250 kHz 2 mVRMS -1 to 1 % of IPN -2.5 to 2.5 % of IPN
AN3V 40 PB30 -40 to 40 A -100 to 100 A 3.135 - 3.3 - 3.465 V 6.5 - 11 mA 250 kHz 1.5 mVRMS -1 to 1 % of IPN -2.5 to 2.5 % of IPN
AN3V 50 PB30 -50 to 50 A -125 to 125 A 3.135 - 3.3 - 3.465 V 6.5 - 11 mA 250 kHz 1.3 mVRMS -1 to 1 % of IPN -2.5 to 2.5 % of IPN

Environmental and Structural Characteristics

Parameter Symbol Unit Min Typical Max Notes
Operating Temperature TA -40 105
Storage Temperature TS -40 105
Weight m g 3.35
Dielectric Strength Test (RMS @ 50Hz, 1min) Vd kV 4.3 Refer to IEC 60664-1
Impulse Withstand Voltage (1.2/50s) VW kV 8 Refer to IEC 60664-1
Creepage Distance (Primary and Secondary) dCp mm >8
Clearance Distance (Primary and Secondary) dCI mm >8
Housing Material - - UL94-V0

2506121200_CHIPSENSE-AN3V-32-PB30_C49164849.pdf

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