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Specifications
Voltage - DC Reverse(Vr):
55V
Spectral Range:
900nm~1700nm
Dark Current:
20nA
Operating Temperature:
-40℃~+85℃
Mfr. Part #:
KPDEA005B-56F-B
Package:
TO-56-3
Key Attributes
Model Number:
KPDEA005B-56F-B
Product Description
Product Overview
The KPDEA005B-T is an InGaAs Avalanche Photodiode designed for high-performance applications. It offers excellent responsivity at 1310nm and 1550nm, with a specified bandwidth and breakdown voltage. This photodiode is suitable for various optical communication and sensing systems where precise light detection is critical.
Product Attributes
- Brand: KYOSEMI SEMICONDUCTOR
- Product Line: Kyosemi Opto America Corporation (U.S.A)
- Model Series: KPDEA005B
- Status: Preliminary
Technical Specifications
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Test Conditions |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| Forward Current | IF | - | - | 5 | mA | - |
| Reverse Current | IR | - | - | 3 | mA | - |
| Operating Ambient Temperature | Ta | -40 | - | +85 | C | - |
| Storage Temperature | Tstg | -40 | - | +85 | C | - |
| Characteristics (Ta=25C unless otherwise noted) | ||||||
| Active Diameter | D | - | 50 | - | m | - |
| Bandwidth | B | 3.0 | - | - | GHz | M=10 |
| Responsivity @1310nm | R | 0.85 | 0.95 | - | A/W | M=1 |
| 0.95 | 1.05 | - | A/W | M=1 @1550nm | ||
| Breakdown voltage | Vbr | 38 | - | 55 | V | Id=10A,Pin=-dBm |
| Dark Current | ID | - | - | 20 | nA | 0.9Vbr |
| Dark Current | ID | 0.13 | 0.14 | 0.15 | - | -45~+20 |
| 0.07 | 0.11 | 0.12 | - | +20~+85 | ||
| Total Capacitance | Cchip | - | - | 0.50 | pF | f=1MHz |
| - | - | 0.80 | pF | f=1MHz | ||
| Temperature coefficient of Vbr | * | - | - | - | V/ | * = Vbr/T |
Note: Specifications are subject to change without notice.
2411192332_California-Eastern-Laboratories-KPDEA005B-56F-B_C3211049.pdf
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