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Specifications
working temperature:
-40℃~+85℃
Current Range:
±450A
Voltage - Supply:
±15V
Band Width:
50kHz
Bidirectional Current Detection:
Support
Mfr. Part #:
BSY2-150/4IOV2
Key Attributes
Model Number:
BSY2-150/4IOV2
Product Description
Product Overview
The BYD BSY2-IOV2-M is a Hall effect current sensor designed for electronic measurement of DC, AC, pulsed, and mixed currents. It provides galvanic isolation between the primary and secondary circuits, featuring a compact design for PCB mounting, low power consumption, and an extended measuring range. This sensor offers easy installation, excellent accuracy, no insertion losses, and high immunity to external interference, making it a cost-effective solution for a wide range of current ratings.
Product Attributes
- Brand: BYD Microelectronics Co., Ltd.
- Product Line: BSY2-IOV2-M
- Certifications: UL 94-V0
Technical Specifications
| Type | Primary Nominal Current (IPN) (A) | Primary Current Measuring Range (IPM) (A) | Supply Voltage (VC) (V) | Current Consumption (IC) (mA) | Output Voltage (VOUT) | Overload Capability (IPC) | Isolation Resistance (RIS) (M) | Output Internal Resistance (ROUT) () | Load Resistance (RL) (K) | Isolation Test Voltage (Vd) (KV) | Accuracy (X) (%) | Electrical Offset Voltage (VOE) (mV) | Hysteresis Offset Voltage (VOH) (mV) | Temp. Coeff. of VOE (TCVOE) (mV/K) | Temp. Coeff. of VOUT (TCVOUT) (%/K) | Response Time (tr) (S) | di/dt (A/S) | Frequency Bandwidth (BW) (kHz) | Ambient Operating Temp. (TA) (C) | Ambient Storage Temp. (TS) (C) | Mass (g) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| BSY2 50/4IOV2 | 50 | 150 | 15 | 15 | 4V 40 @ IPN, RL = 10 k, TA = 25C | At 50* IPN | >1000 @ 500 VDC | 100 approx | >1 | 3 @50Hz, 1 min | <1 @ IPN, TA = 25C (without offset) | <20 @TA = 25C | <20 @IP= 0; after an excursion of 1* IPN | <2 @BSY2 50--75IOV2-M | <0.1 @% of reading | <3 @ 90% of IPN step | >50 | DC~50 @-3dB | -40.+85 | -40.+105 | approx 60 |
| BSY2 -75/4IOV2 | 75 | 225 | 15 | 15 | 4V 40 @ IPN, RL = 10 k, TA = 25C | At 50* IPN | >1000 @ 500 VDC | 100 approx | >1 | 3 @50Hz, 1 min | <1 @ IPN, TA = 25C (without offset) | <20 @TA = 25C | <20 @IP= 0; after an excursion of 1* IPN | <2 @BSY2 50--75IOV2-M | <0.1 @% of reading | <3 @ 90% of IPN step | >50 | DC~50 @-3dB | -40.+85 | -40.+105 | approx 60 |
| BSY2-100/4IOV2 | 100 | 300 | 15 | 15 | 4V 40 @ IPN, RL = 10 k, TA = 25C | At 50* IPN | >1000 @ 500 VDC | 100 approx | >1 | 3 @50Hz, 1 min | <1 @ IPN, TA = 25C (without offset) | <20 @TA = 25C | <20 @IP= 0; after an excursion of 1* IPN | <1 @BSY2 100--600IOV2-M | <0.1 @% of reading | <3 @ 90% of IPN step | >50 | DC~50 @-3dB | -40.+85 | -40.+105 | approx 60 |
| BSY2-150/4IOV2 | 150 | 450 | 15 | 15 | 4V 40 @ IPN, RL = 10 k, TA = 25C | At 50* IPN | >1000 @ 500 VDC | 100 approx | >1 | 3 @50Hz, 1 min | <1 @ IPN, TA = 25C (without offset) | <20 @TA = 25C | <20 @IP= 0; after an excursion of 1* IPN | <1 @BSY2 100--600IOV2-M | <0.1 @% of reading | <3 @ 90% of IPN step | >50 | DC~50 @-3dB | -40.+85 | -40.+105 | approx 60 |
| BSY2-200/4IOV2 | 200 | 600 | 15 | 15 | 4V 40 @ IPN, RL = 10 k, TA = 25C | At 50* IPN | >1000 @ 500 VDC | 100 approx | >1 | 3 @50Hz, 1 min | <1 @ IPN, TA = 25C (without offset) | <20 @TA = 25C | <20 @IP= 0; after an excursion of 1* IPN | <1 @BSY2 100--600IOV2-M | <0.1 @% of reading | <3 @ 90% of IPN step | >50 | DC~50 @-3dB | -40.+85 | -40.+105 | approx 60 |
| BSY2-300/4IOV2 | 300 | 900 | 15 | 15 | 4V 40 @ IPN, RL = 10 k, TA = 25C | At 50* IPN | >1000 @ 500 VDC | 100 approx | >1 | 3 @50Hz, 1 min | <1 @ IPN, TA = 25C (without offset) | <20 @TA = 25C | <20 @IP= 0; after an excursion of 1* IPN | <1 @BSY2 100--600IOV2-M | <0.1 @% of reading | <3 @ 90% of IPN step | >50 | DC~50 @-3dB | -40.+85 | -40.+105 | approx 60 |
| BSY2-400/4IOV2 | 400 | 900 | 15 | 15 | 4V 40 @ IPN, RL = 10 k, TA = 25C | At 50* IPN | >1000 @ 500 VDC | 100 approx | >1 | 3 @50Hz, 1 min | <1 @ IPN, TA = 25C (without offset) | <20 @TA = 25C | <20 @IP= 0; after an excursion of 1* IPN | <1 @BSY2 100--600IOV2-M | <0.1 @% of reading | <3 @ 90% of IPN step | >50 | DC~50 @-3dB | -40.+85 | -40.+105 | approx 60 |
| BSY2-500/4IOV2 | 500 | 900 | 15 | 15 | 4V 40 @ IPN, RL = 10 k, TA = 25C | At 50* IPN | >1000 @ 500 VDC | 100 approx | >1 | 3 @50Hz, 1 min | <1 @ IPN, TA = 25C (without offset) | <20 @TA = 25C | <20 @IP= 0; after an excursion of 1* IPN | <1 @BSY2 100--600IOV2-M | <0.1 @% of reading | <3 @ 90% of IPN step | >50 | DC~50 @-3dB | -40.+85 | -40.+105 | approx 60 |
| BSY2-600/4IOV2 | 600 | 900 | 15 | 15 | 4V 40 @ IPN, RL = 10 k, TA = 25C | At 50* IPN | >1000 @ 500 VDC | 100 approx | >1 | 3 @50Hz, 1 min | <1 @ IPN, TA = 25C (without offset) | <20 @TA = 25C | <20 @IP= 0; after an excursion of 1* IPN | <1 @BSY2 100--600IOV2-M | <0.1 @% of reading | <3 @ 90% of IPN step | >50 | DC~50 @-3dB | -40.+85 | -40.+105 | approx 60 |
2410121638_BYD-BSY2-150-4IOV2_C444911.pdf
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