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Specifications
Voltage - DC Reverse(Vr):
200V
Spectral Range:
400nm~1000nm
Dark Current:
10pA
Operating Temperature:
-40℃~+85℃
Mfr. Part #:
KPDA020P-H8-B
Package:
TO-206AA(TO-18)
Key Attributes
Model Number:
KPDA020P-H8-B
Product Description
Product Overview
The KPDA020P-H8 is a Silicon Avalanche Photodiode from KYOTO SEMICONDUCTOR, designed for high-speed optical detection. It offers response speeds of up to 1.3GHz for a 0.2mm diameter, 1.2GHz for a 0.5mm diameter, and 0.6GHz for a 1.0mm diameter. This device is suitable for applications requiring high gain and detection of weak light signals, including short wavelength optical communications, optical measurement, and optical sensors.
Product Attributes
- Brand: KYOTO SEMICONDUCTOR
- Product Line: KP-A Si Avalanche Photodiodes
- Model: KPDA020P-H8
- Package: TO-CAN
- Certifications: RoHS Directive (2011/65/EU)
Technical Specifications
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Conditions |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| Reverse Current | IR | - | - | 0.2 | mA | - |
| Forward current | IF | - | - | 10 | mA | - |
| Operating temperature | Topr | -40 | - | +85 | Avoid dew condensation | |
| Storage temperature | Tstg | -40 | - | +125 | Avoid dew condensation | |
| Electrical and Optical characteristics (Ta=25 unless otherwise noted) | ||||||
| Active area | D | - | 0.2 | - | mm | - |
| Sensitive wavelength | 400 | 780(P) | 1000 | nm | - | |
| Responsivity | R | 0.4 | 0.45 | - | A/W | M=1, =850nm |
| Dark current | ID | - | 10 | 200 | pA | VR=50V |
| Breakdown voltage | VB | 80 | 120 | 200 | V | IR=100A |
| Temperature coefficient of VB | VB/T | - | -0.55 | - | V/ | - |
| Terminal capacitance | Ct | - | 0.6 | 1.2 | pF | VR=0.9VB f=1MHz |
| Cutoff frequency | fc | - | 1.3 | - | GHz | M=100, RL=50, =850nm |
2411192332_California-Eastern-Laboratories-KPDA020P-H8-B_C3211091.pdf
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