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quality Silicon Avalanche Photodiode California Eastern Laboratories KPDA100P-H8-B for High Speed Optical Detection factory
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quality Silicon Avalanche Photodiode California Eastern Laboratories KPDA100P-H8-B for High Speed Optical Detection factory
quality Silicon Avalanche Photodiode California Eastern Laboratories KPDA100P-H8-B for High Speed Optical Detection factory
quality Silicon Avalanche Photodiode California Eastern Laboratories KPDA100P-H8-B for High Speed Optical Detection factory
>
Specifications
Voltage - DC Reverse(Vr):
200V
Spectral Range:
400nm~1000nm
Dark Current:
30pA
Operating Temperature:
-40℃~+85℃
Mfr. Part #:
KPDA100P-H8-B
Package:
TO-206AA(TO-18)
Key Attributes
Model Number: KPDA100P-H8-B
Product Description

Product Overview

The KPDA100P-H8 is a Silicon Avalanche Photodiode designed for high-speed optical detection. It offers a 1.3GHz response time with a 0.2mm diameter, a 1.2GHz response with a 0.5mm diameter, and a 0.6GHz response with a 1.0mm diameter. This photodiode is suitable for applications requiring high gain, such as short wavelength optical communications, optical measurement, optical sensors, and weak light signal detection. It is housed in a TO-CAN package.

Product Attributes

  • Brand: KYOSEMI
  • Product Line: KP-A Si Avalanche Photodiodes
  • Model: KPDA100P-H8
  • Package: TO-CAN
  • Certifications: RoHS Directive (2011/65/EU)

Technical Specifications

Parameter Symbol Min. Typ. Max. Unit Conditions
Absolute Maximum Ratings
Reverse Current IR - - 0.2 mA -
Forward current IF - - 10 mA -
Operating temperature Topr -40 - +85 Avoid dew condensation
Storage temperature Tstg -40 - +125 Avoid dew condensation
Electrical and Optical characteristics (Ta=25 unless otherwise noted)
Active area D - 1.0 - mm -
Sensitive wavelength 400 780(P) 1000 nm -
Responsivity R 0.4 0.45 - A/W M=1, =850nm
Dark current ID - 30 1000 pA VR=50V
Breakdown voltage VB 80 120 200 V IR=100A
Temperature coefficient of VB VB/T - -0.55 - V/ -
Terminal capacitance Ct - 5.5 7 pF VR=0.9VB f=1MHz
Cutoff frequency fc - 0.6 - GHz M=100, RL=50, =850nm

2411192332_California-Eastern-Laboratories-KPDA100P-H8-B_C3211164.pdf

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