Broadcom AFBR-S4N66P014M Single-Channel Silicon Photomultiplier (SiPM)
Product Overview
The Broadcom AFBR-S4N66P014M is a single-channel silicon photomultiplier (SiPM) designed for ultra-sensitive precision measurements of single photons. Leveraging NUV-MT technology, it offers enhanced photo-detection efficiency (PDE) with reduced dark count rate and crosstalk compared to previous NUV-HD technology. Its 40 m SPAD pitch allows for larger area coverage through tiling multiple units. Encased in a highly transparent epoxy mold compound, it exhibits excellent mechanical stability and robustness, with high sensitivity in the blue and near-UV regions of the light spectrum. This SiPM is ideal for detecting low-level pulsed light sources, including Cherenkov or scintillation light from common organic and inorganic scintillator materials, and is lead-free and RoHS compliant.
Product Attributes
- Brand: Broadcom
- Technology: NUV-MT
- Encapsulation: Epoxy clear mold compound
- Compliance: RoHS, CFM, REACH
- Lead-free: Yes
Technical Specifications
| Parameter | Symbol | Value | Unit | Notes |
|---|---|---|---|---|
| High PDE (at 420 nm) | PDE | 63 | % | At 420 nm |
| Cell pitch | LCELL | 40 | m | Micro cell pitch |
| Operating temperature range | TA | 20 to +60 | C | Biased at constant voltage = 12V above breakdown |
| Storage Temperature | TSG | 20 to +60 | C | |
| Soldering Temperature | TSOLD | C | Reflow solderable according to solder diagram | |
| Lead Soldering Time | tSOLD | s | ||
| ESD Voltage Capability (HBM) | ESDHBM | kV | See Absolute Maximum Ratings | |
| ESD Voltage Capability (CDM) | ESDCDM | V | See Absolute Maximum Ratings | |
| Operating Overvoltage | VOV | V | 16 V | |
| Package outer dimensions | PD | 6.48 x 6.71 | mm | |
| Single device area | DA | 6.14 x 6.14 | mm | |
| Active area | AA | 6.00 x 6.00 | mm | |
| Number of micro cells per element | NCELLS | 22,428 | ||
| Spectral range | 250 to 900 | nm | ||
| Peak sensitivity wavelength | PK | nm | 420 nm | |
| Breakdown voltage | VBD | 32 to 33 | V | |
| Temperature coefficient of breakdown voltage | VBD/T | mV/C | 30 mV/C | |
| Photo-detection efficiency (PDE) | PDE | % | Measured at the peak sensitivity wavelength. Does not include correlated noise. | |
| Dark current per element | ID | A | 8.6 A | |
| Dark count rate per element | DCR | Mcps | Measured at 0.5 p.e. amplitude. Does not include delayed correlated events. 4.4 Mcps | |
| Dark count rate per unit area | DCRmm2 | kcps/mm | 125 kcps/mm | |
| Gain | G | x10 | 7.3 x10 | |
| Optical crosstalk | PXTALK | % | 23 % | |
| Afterpulsing probability | PAD | < 1 | % | |
| Recharge time constant | FALL | ns | 55 ns | |
| Nominal terminal capacitance | CT | pF | 1550 pF | |
| Temperature coefficient of gain | G/T | x10/C | 1.46 x10/C |
Applications
- X-ray and gamma-ray detection
- Nuclear medicine
- Positron emission tomography
- Safety and security
- Physics experiments
- Cherenkov detection
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