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Specifications
Voltage - DC Reverse(Vr):
200V
Spectral Range:
400nm~1000nm
Dark Current:
20pA
Operating Temperature:
-40℃~+85℃
Mfr. Part #:
KPDA050P-H8-B
Package:
TO-206AA(TO-18)
Key Attributes
Model Number:
KPDA050P-H8-B
Product Description
Product Overview
The KPDA050P-H8 is a Silicon Avalanche Photodiode (APD) from KYOTO SEMICONDUCTOR, designed for high-speed optical detection. It offers a 1.3GHz response with a 0.2mm diameter, 1.2GHz with a 0.5mm diameter, and 0.6GHz with a 1.0mm diameter. This APD is suitable for applications requiring weak light signal detection, such as short wavelength optical communications, optical measurement, and optical sensors.
Product Attributes
- Brand: KYOSEMI
- Product Line: KP-A Si Avalanche Photodiodes
- Model: KPDA050P-H8
- Material: Silicon (Si)
- Package: TO-CAN
- Certifications: RoHS Directive (2011/65/EU)
- Origin: Japan (implied by Kyoto Headquarter address)
Technical Specifications
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Conditions |
|---|---|---|---|---|---|---|
| Active area | D | - | 0.5 | - | mm | - |
| Sensitive wavelength | 400 | 780(P) | 1000 | nm | - | |
| Responsivity | R | 0.4 | 0.45 | - | A/W | M=1, =850nm |
| Dark current | ID | - | 20 | 500 | pA | VR=50V |
| Breakdown voltage | VB | 80 | 120 | 200 | V | IR=100A |
| Temperature coefficient of VB | VB/T | - | -0.55 | - | V/ | - |
| Terminal capacitance | Ct | - | 1.7 | 3 | pF | VR=0.9VB f=1MHz |
| Cutoff frequency | fc | - | 1.2 | - | GHz | M=100, RL=50, =850nm |
| Absolute Maximum Ratings: Reverse Current | IR | - | - | 0.2 | mA | - |
| Absolute Maximum Ratings: Forward current | IF | - | - | 10 | mA | - |
| Absolute Maximum Ratings: Operating temperature | Topr | -40 | - | 85 | Avoid dew condensation | |
| Absolute Maximum Ratings: Storage temperature | Tstg | -40 | - | 125 | Avoid dew condensation |
2411192332_California-Eastern-Laboratories-KPDA050P-H8-B_C3211103.pdf
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