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quality Hall effect current sensor BYD BSY2-1004IOV2 with low current consumption and wide temperature range factory
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quality Hall effect current sensor BYD BSY2-1004IOV2 with low current consumption and wide temperature range factory
>
Specifications
working temperature:
-40℃~+85℃
Current Range:
±300A
Voltage - Supply:
±15V
Band Width:
50kHz
Bidirectional Current Detection:
Support
Mfr. Part #:
BSY2-100/4IOV2
Key Attributes
Model Number: BSY2-100/4IOV2
Product Description

Product Overview

The BYD BSY2-IOV2-M current sensors utilize the Hall effect principle for electronic measurement of DC, AC, pulsed, and mixed currents. They provide galvanic isolation between the primary and secondary circuits, featuring a compact design for PCB mounting, low power consumption, and an extended measuring range. These sensors offer easy installation, excellent accuracy, no insertion losses, and high immunity to external interference, making them suitable for a wide range of industrial applications.

Product Attributes

  • Brand: BYD Microelectronics Co., Ltd.
  • Product Line: BSY2-IOV2-M
  • Certifications: UL 94-V0

Technical Specifications

TypePrimary nominal current r.m.s IPN (A)Primary current measuring range IPM (A)Supply voltage (5%) VC (V)Current consumption IC (mA)Output voltage (Analog) VOUTOverload capability (1ms) IPCIsolation resistance RIS (M)Output internal resistance ROUT ()Load resistance RL (K)R.M.S voltage for AC isolation test Vd (KV)Accuracy X (%)Electrical offset voltage VOE (mV)Temperature coefficient of VOE (mV/K)Temperature coefficient of VOUT (%/K)Response time tr (S)di/dt accurately followed di/dt (A/S)Frequency bandwidth BW (kHz)Ambient operating temperature TA ()Ambient storage temperature TS ()Mass (g)
BSY2 50/4IOV25015015154V 40 @ IPN, RL = 10 k, TA = 25C50* IPN>1000 @ 500 VDC100 approx>13 @50Hz, 1 min<1 @ IPN, TA = 25C (without offset)<20 @TA = 25C<2 @BSY2 50--75IOV2-M<0.1 @% of reading<3 @ 90% of IPN step>50DC~50 @-3dB-40.+85-40.+105approx 60
BSY2 -75/4IOV27522515154V 40 @ IPN, RL = 10 k, TA = 25C50* IPN>1000 @ 500 VDC100 approx>13 @50Hz, 1 min<1 @ IPN, TA = 25C (without offset)<20 @TA = 25C<2 @BSY2 50--75IOV2-M<0.1 @% of reading<3 @ 90% of IPN step>50DC~50 @-3dB-40.+85-40.+105approx 60
BSY2-100/4IOV210030015154V 40 @ IPN, RL = 10 k, TA = 25C50* IPN>1000 @ 500 VDC100 approx>13 @50Hz, 1 min<1 @ IPN, TA = 25C (without offset)<20 @TA = 25C<1 @BSY2 100--600IOV2-M<0.1 @% of reading<3 @ 90% of IPN step>50DC~50 @-3dB-40.+85-40.+105approx 60
BSY2-150/4IOV215045015154V 40 @ IPN, RL = 10 k, TA = 25C50* IPN>1000 @ 500 VDC100 approx>13 @50Hz, 1 min<1 @ IPN, TA = 25C (without offset)<20 @TA = 25C<1 @BSY2 100--600IOV2-M<0.1 @% of reading<3 @ 90% of IPN step>50DC~50 @-3dB-40.+85-40.+105approx 60
BSY2-200/4IOV220060015154V 40 @ IPN, RL = 10 k, TA = 25C50* IPN>1000 @ 500 VDC100 approx>13 @50Hz, 1 min<1 @ IPN, TA = 25C (without offset)<20 @TA = 25C<1 @BSY2 100--600IOV2-M<0.1 @% of reading<3 @ 90% of IPN step>50DC~50 @-3dB-40.+85-40.+105approx 60
BSY2-300/4IOV230090015154V 40 @ IPN, RL = 10 k, TA = 25C50* IPN>1000 @ 500 VDC100 approx>13 @50Hz, 1 min<1 @ IPN, TA = 25C (without offset)<20 @TA = 25C<1 @BSY2 100--600IOV2-M<0.1 @% of reading<3 @ 90% of IPN step>50DC~50 @-3dB-40.+85-40.+105approx 60
BSY2-400/4IOV240090015154V 40 @ IPN, RL = 10 k, TA = 25C50* IPN>1000 @ 500 VDC100 approx>13 @50Hz, 1 min<1 @ IPN, TA = 25C (without offset)<20 @TA = 25C<1 @BSY2 100--600IOV2-M<0.1 @% of reading<3 @ 90% of IPN step>50DC~50 @-3dB-40.+85-40.+105approx 60
BSY2-500/4IOV250090015154V 40 @ IPN, RL = 10 k, TA = 25C50* IPN>1000 @ 500 VDC100 approx>13 @50Hz, 1 min<1 @ IPN, TA = 25C (without offset)<20 @TA = 25C<1 @BSY2 100--600IOV2-M<0.1 @% of reading<3 @ 90% of IPN step>50DC~50 @-3dB-40.+85-40.+105approx 60
BSY2-600/4IOV260090015154V 40 @ IPN, RL = 10 k, TA = 25C50* IPN>1000 @ 500 VDC100 approx>13 @50Hz, 1 min<1 @ IPN, TA = 25C (without offset)<20 @TA = 25C<1 @BSY2 100--600IOV2-M<0.1 @% of reading<3 @ 90% of IPN step>50DC~50 @-3dB-40.+85-40.+105approx 60

2410121638_BYD-BSY2-100-4IOV2_C444910.pdf

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