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Specifications
Voltage - DC Reverse(Vr):
35.5V
Spectral Range:
500nm~980nm
Operating Temperature:
-40℃~+85℃
Mfr. Part #:
AFBR-S4P11P012R
Package:
SMD-4P
Key Attributes
Model Number:
AFBR-S4P11P012R
Product Description
Product Overview
The Broadcom AFBR-S4P11P012R is a highly sensitive silicon photomultiplier (SiPM) designed for detecting light in the near-infrared spectrum. It offers a wide dynamic range due to its small cell pitch and fast recharge time. The device features an active region divided into two independent elements, providing design flexibility for readout systems. Encapsulated in a robust, transparent molded lead frame package, this SiPM is ideal for LiDAR and direct time-of-flight (dToF) applications. It is lead-free and RoHS compliant.
Product Attributes
- Brand: Broadcom
- Model: AFBR-S4P11P012R
- Type: NIR Dual-Channel Silicon Photomultiplier (SiPM)
- Certifications: RoHS compliant, Lead free
Technical Specifications
| Parameter | Symbol | Value | Unit | Notes |
|---|---|---|---|---|
| Photodetection Efficiency (PDE) at = 905 nm | PDE | 28 | % | |
| Photodetection Efficiency (PDE) at = 650 nm | PDE | 26 | % | |
| Cell Recharge Time Constant | fall | 15 ns | Very fast | |
| Operating Temperature Range | TA | 40 to +85 | C | |
| Device Area | DA | 1.9 1.5 | mm | |
| Total Active Area | AA | 1.0 1.0 | mm | |
| Element Active Area | EAA | 0.5 1.0 | mm | Per channel |
| Micro Cell Pitch | Lcell | 12.5 m | ||
| Number of Micro Cells | Ncells | 6216 | Total | |
| Spectral Range | 500 to 980 | nm | ||
| Peak Sensitivity Wavelength | PK | 750 nm | ||
| Peak PDE | PDE | 37 % | At PK | |
| Dark Current | ID | 61 nA | Typical | |
| Dark Count Rate | DCR | 1.17 Mcps | Measured at 0.5 p.e. amplitude | |
| Gain | G | 340 10 | Typical | |
| Optical Crosstalk Probability | PXcorr | < 2 | % | |
| Afterpulsing Probability | AP | 22.6 % | ||
| Breakdown Voltage | VBD | 35.5 to 37.5 | V | Binning available (A, B, C) |
| Nominal Terminal Capacitance | CT | 38 pF | Measured at 200 kHz | |
| Temperature Coefficient of Breakdown Voltage | VBR/T | 70 mV/C | ||
| Temperature Coefficient of Gain | G/T | 2.6 10/C | ||
| Storage Temperature | TSTG | 40 to +85 | C | |
| Soldering Temperature | TSOLD | 260 C | According to JEDEC J-STD-020D (MSL3) | |
| Lead Soldering Time | tSOLD | 10 s | ||
| Electrostatic Discharge Voltage Capability (HBM) | ESD HBM | 500 V | ||
| Operating Overvoltage | VOV | 12 V | ||
| DC Operating Current | IMAX | 10 mA | With thermal resistance junction to solder point of 40 K/W |
Applications
- 3D ranging (LiDAR)
- Direct time of flight (dToF)
- Robotics
- Drones
- Biophotonics
2504101957_Broadcom-AFBR-S4P11P012R_C42954661.pdf
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