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Specifications
Voltage - DC Reverse(Vr):
2V
Spectral Range:
900nm~1700nm
Dark Current:
1nA
Operating Temperature:
-20℃~+70℃
Mfr. Part #:
KPDE150-H45-B
Package:
TO-CAN
Key Attributes
Model Number:
KPDE150-H45-B
Product Description
Product Overview
The KPDE150-H45 is an InGaAs photodiode from KYOTO SEMICONDUCTOR Co., Ltd. It features a large sensitive area and low voltage operation, making it suitable for applications such as laser power monitors, laser diode and LED aging equipment, near-infrared sensing systems, and power meters. Custom-designed photodiodes are also available.
Product Attributes
- Brand: KYOTO SEMICONDUCTOR
- Product Line: InGaAs Photodiodes
- Model: KPDE150-H45
- Package: TO-CAN
- Conformity: RoHS Directive (2011/65/EU)
Technical Specifications
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Conditions |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| Reverse voltage | VR | - | - | 2 | V | - |
| Reverse Current | IR | - | - | 50 | mA | - |
| Forward current | IF | - | - | 50 | mA | - |
| Operating temperature | Topr | -20 | - | 70 | Avoid dew condensation | |
| Storage temperature | Tstg | -20 | - | 80 | Avoid dew condensation | |
| Electrical and Optical characteristics (Ta=25 unless otherwise noted) | ||||||
| Active area | S | - | 1500 | - | m | - |
| Sensitive wavelength | 900 | - | 1700 | nm | - | |
| Responsivity | R | - | 0.8 | - | A/W | VR=1V =1310nm |
| - | 0.9 | 1.0 | VR=1V =1550nm | |||
| Dark current | ID | - | - | 1 | nA | VR=1V |
| Total capacitance | Ct | - | - | 150 | pF | VR=1V f=1MHz |
2411192332_California-Eastern-Laboratories-KPDE150-H45-B_C3211039.pdf
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