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Specifications
Voltage - DC Reverse(Vr):
55V
Spectral Range:
900nm~1700nm
Dark Current:
15nA
Operating Temperature:
-40℃~+85℃
Mfr. Part #:
KPDEA007-56F-B
Package:
TO-56-3
Key Attributes
Model Number:
KPDEA007-56F-B
Product Description
Product Overview
The KPDEA007-56F is an InGaAs Avalanche Photodiode from KYOSEMI, designed for high-speed applications up to 1.25Gbps. It features a 5.6mm CAN package with a flat window cap, offering high sensitivity and low dark current. This photodiode is suitable for applications such as SONET and GE-PON.
Product Attributes
- Brand: KYOSEMI
- Product Line: KP-A InGaAs Avalanche Photodiodes
- Package Type: TO-CAN
- Window Cap: Flat window cap
- Compliance: RoHS Directive (2011/65/EU)
Technical Specifications
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Conditions |
|---|---|---|---|---|---|---|
| Reverse Current | IR | - | - | 2 | mA | - |
| Forward current | IF | - | - | 10 | mA | - |
| Operating temperature | Topr | -40 | - | +85 | Avoid dew condensation | |
| Storage temperature | Tstg | -40 | - | +85 | Avoid dew condensation | |
| Active area | D | - | 0.075 | - | mm | - |
| Bandwidth | BW | - | 2.0 | - | GHz | M=10 |
| Responsivity | R | 0.80 | 0.90 | 1.05 | A/W | =1310nm, M=1 |
| =1550nm, M=1 | ||||||
| Dark current | ID | - | 15 | 65 | nA | VR=VB x 0.9 |
| Breakdown voltage | VB | 35 | 45 | 55 | V | ID=10A |
| Temperature coefficient of VB | VB/T | 0.08 | 0.1 | 0.12 | V/ | - |
| Chip capacitance | Cchip | - | 0.54 | 0.65 | pF | f=1MHz |
| Total capacitance | Ct | - | 0.9 | 1.1 | pF | f=1MHz |
2411192332_California-Eastern-Laboratories-KPDEA007-56F-B_C3211079.pdf
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