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quality InGaAs photodiode California Eastern Laboratories KPDE300-H53-B designed for laser diode aging and near-infrared sensing factory
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quality InGaAs photodiode California Eastern Laboratories KPDE300-H53-B designed for laser diode aging and near-infrared sensing factory
quality InGaAs photodiode California Eastern Laboratories KPDE300-H53-B designed for laser diode aging and near-infrared sensing factory
quality InGaAs photodiode California Eastern Laboratories KPDE300-H53-B designed for laser diode aging and near-infrared sensing factory
>
Specifications
Voltage - DC Reverse(Vr):
2V
Spectral Range:
900nm~1700nm
Dark Current:
2nA
Operating Temperature:
-20℃~+70℃
Mfr. Part #:
KPDE300-H53-B
Package:
TO-205AD(TO-39-3)
Key Attributes
Model Number: KPDE300-H53-B
Product Description

Product Overview

The KPDE300-H53 is an InGaAs photodiode from KYOTO SEMICONDUCTOR, designed for large sensitive area and low voltage operation. It is suitable for applications including laser power monitoring, laser diode and LED aging equipment, near-infrared sensing systems, and power meters. Custom-designed photodiodes are also available.

Product Attributes

  • Brand: KYOTO SEMICONDUCTOR
  • Product Line: InGaAs Photodiodes
  • Model: KPDE300-H53
  • Package: TO-CAN
  • Certifications: RoHS Directive (2011/65/EU)

Technical Specifications

Parameter Symbol Min. Typ. Max. Unit Conditions
Absolute Maximum Ratings
Reverse voltage VR - - 2 V -
Reverse Current IR - - 2 mA -
Forward current IF - - 2 mA -
Operating temperature Topr -20 - 70 Avoid dew condensation
Storage temperature Tstg -20 - 80 Avoid dew condensation
Electrical and Optical characteristics (Ta=25 unless otherwise noted)
Active area S - 3000 - m -
Sensitive wavelength 900 - 1700 nm -
Responsivity R - 0.8 - A/W VR=1V =1310nm
- 0.9 1.0 A/W VR=1V =1550nm
Dark current ID - - 2 nA VR=1V
Total capacitance Ct - - 1 mV VR=1V f=1MHz

2411192332_California-Eastern-Laboratories-KPDE300-H53-B_C3211100.pdf

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