Product Overview
The Broadcom AFBR-S4N44P014M is a single-channel silicon photomultiplier (SiPM) designed for ultra-sensitive precision measurements of single photons. Leveraging NUV-MT technology, it offers enhanced photo-detection efficiency (PDE), reduced dark count rate, and lower crosstalk compared to previous NUV-HD technology. Its 40 m SPAD pitch allows for tiling multiple units to cover larger areas. Encased in a highly transparent epoxy mold compound, it exhibits broad spectral response with high sensitivity in the blue and near-UV regions. This SiPM is ideally suited for detecting low-level pulsed light sources, including Cherenkov or scintillation light from common organic and inorganic scintillator materials. It is lead-free and RoHS compliant.
Product Attributes
- Brand: Broadcom
- Technology: NUV-MT
- Encapsulation: Epoxy clear mold compound
- Compliance: Lead-free, RoHS, CFM, REACH
Technical Specifications
| Parameter | Symbol | Min. | Typical | Max. | Unit | Reference |
|---|---|---|---|---|---|---|
| Geometric Features | ||||||
| Package outer dimensions | PD | 4.31 x 4.18 | mm | |||
| Single device area | DA | 3.84 x 3.74 | mm | |||
| Active area | AA | 3.72 x 3.62 | mm | |||
| Micro cell pitch | LCELL | 40 | m | |||
| Number of micro cells per element | NCELLS | 8334 | ||||
| Optical and Electrical Features | ||||||
| Spectral range | 250 | 900 | nm | Figure 5 | ||
| Peak sensitivity wavelength | PK | 420 | nm | Figure 5 | ||
| Breakdown voltage | VBD | 32 | 32.5 | 33 | V | Figure 7 |
| Temperature coefficient of breakdown voltage | VBD/T | 30 | mV/C | |||
| Photo-detection efficiency (at 420 nm) | PDE | 63 | % | Figure 5, Figure 6 | ||
| Dark current per element (at 12V OV) | ID | 3.3 | A | Figure 7 | ||
| Dark count rate per element (at 0.5 p.e. amplitude) | DCR | 1.7 | Mcps | Figure 8 | ||
| Dark count rate per unit area | DCRmm | 125 | kcps/mm | |||
| Gain | G | 7.3 | x106 | Figure 9 | ||
| Optical crosstalk | PXTALK | 23 | % | Figure 10 | ||
| Afterpulsing probability | PAD | < 1 | % | Figure 10 | ||
| Recharge time constant | FALL | 55 | ns | Figure 11 | ||
| Nominal terminal capacitance | CT | 580 | pF | |||
| Temperature coefficient of gain | G/T | 1.46 | x104/C | |||
| Absolute Maximum Ratings | ||||||
| Storage Temperature | TSG | 20 | +60 | C | ||
| Operating Temperature | TA | 20 | +60 | C | a. Biased at constant voltage = 12V above breakdown. | |
| Soldering Temperature | TSOLD | 245 | C | b. The tile is reflow solderable according to the solder diagram shown in Figure 4. | ||
| Lead Soldering Time | tSOLD | 60 | s | b,c | ||
| Electrostatic Discharge Voltage Capability (HBM) | ESDHBM | 2 | kV | |||
| Electrostatic Discharge Voltage Capability (CDM) | ESDCDM | 500 | V | |||
| Operating Overvoltage | VOV | 16 | V | |||
2504101957_Broadcom-AFBR-S4N44P014M_C18212188.pdf
Please Use Our Online Inquiry Contact Form Below If You Have Any Questions, Our Team Will Get Back To You As Soon As Possible
