Online Service

Online Service

Contact Person
+86 136 6733 2386
quality Bardeen Micro BDH8203 CMOS Hall switch with sleep awake logic and omnipolar high sensitivity sensing factory
<
quality Bardeen Micro BDH8203 CMOS Hall switch with sleep awake logic and omnipolar high sensitivity sensing factory
>
Specifications
Operating Current:
2.4uA
Operation Points:
±3.5mT
Release Points:
±2.3mT
Operating Temperature:
-40℃~+85℃
Voltage - Supply:
1.65V~5.5V
Mfr. Part #:
BDH8203
Package:
TO-92S
Key Attributes
Model Number: BDH8203
Product Description

Product Overview

The BDH8203 is a CMOS omnipolar Hall switch designed for high sensitivity and micropower consumption. It features an on-chip Hall voltage generator, voltage regulator (1.65-5.5V), sleep/awake logic, temperature compensation, small-signal amplifier, dynamic offset cancellation, and a Schmitt trigger with an open-drain output. This device is capable of detecting both south and north poles, activating its output when a sufficient magnetic field is present and deactivating it in the absence of a field. Its pole-independent sensing technique enhances manufacturability. Ideal for battery-powered applications, it offers ultra-low power consumption (typically 15W at 3.3V, with an average of 5A in ultra-low power mode) and operates within a temperature range of -40C to 85C. Applications include solid-state switches, awake switches for mobile devices, magnet proximity sensors, and notebook/PAD PC/PDA applications.

Product Attributes

  • Brand: Shenzhen Bardeen Microelectronics (BDM)
  • Technology: Mixed signal CMOS
  • Sensitivity: Omnipolar, High Sensitivity
  • Power Consumption: Micropower, Ultra Low Power
  • Output Type: Open-drain, Totem-pole
  • RF Noise Protection: Strong
  • ESD Protection: HBM > +/- 4KV (min)

Technical Specifications

Parameter Symbol Test Conditions Min. Typ. Max. Unit
Operating voltage VDD Operating 1.65 3.3 5.5 V
Output High Voltage VOH B<BrpS, IOUT =-0.5mA VDD-0.2 - - V
Output Low Voltage VOL BopS<B, IOUT =+0.5mA - - 0.2 V
Supply current (Average) IDD1AVG VDD=1.8V - 1.1 - A
Supply Current During Startup Time IDD1EN VDD=1.8V - 0.7 - mA
Supply Current During Standby Time IDD1DIS VDD=1.8V - 0.42 - A
Supply current (Average) IDD1AVG VDD=3.0V - 2.4 - A
Supply Current During Startup Time IDD1EN VDD=3.0V - 1 - mA
Supply Current During Standby Time IDD1DIS VDD=3.0V - 1.4 - A
Awake mode time TAW Operating - 25 - S
Sleep mode time TSL Operating - 50 100 mS
Operating point (South Pole) BOPS TA=25 20 35 50 Gs
Operating point (South Pole) BOPS TA=-40 to 85 - 37 - Gs
Operating point (North Pole) BOPN TA=25 -20 -35 -50 Gs
Operating point (North Pole) BOPN TA=-40 to 85 - -37 - Gs
Release point (South Pole) BRPS TA=25 8 23 40 Gs
Release point (South Pole) BRPS TA=-40 to 85 - 25 - Gs
Release point (North Pole) BRPN TA=25 -8 -23 -40 Gs
Release point (North Pole) BRPN TA=-40 to 85 - -25 - Gs
Hysteresis BHYS TA=25 - 12 - Gs
Hysteresis BHYS TA=-40 to 85 - 12 - Gs
Operating Temperature Range TA -40 85 C
Storage Temperature Range TS -50 150 C

Package Information

SOT-23 Package

  • Pin 1: VCC (Supply voltage)
  • Pin 2: OUT (CMOS Output)
  • Pin 3: GND (Ground)

TO-92S Package

  • Pin 1: VCC (Supply voltage)
  • Pin 2: GND (Ground)
  • Pin 3: OUT (CMOS Output)

Absolute Maximum Ratings

Parameter Symbol Value Unit
Supply Voltage (operating) VDD 6 V
Supply Current IDD 1 mA
Output Voltage VOUT 6 V
Output Current IOUT 1 mA
Operating Temperature Range TA -40 to 85 C
Storage Temperature Range TS -50 to 150 C
ESD Sensitivity - 4000 V

Note: Exceeding the absolute maximum ratings may cause permanent damage. Exposure to absolute-maximum rated conditions for extended periods may affect device reliability.


2410121551_Bardeen-Micro--BDH8203_C7434227.pdf

Request A Quote

Please Use Our Online Inquiry Contact Form Below If You Have Any Questions, Our Team Will Get Back To You As Soon As Possible

You Can Upload Up To 5 Files And Each File Sized 10M Max