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quality Miniature proximity sensor module AMS TMD26353M with 940nm IR VCSEL and dual photodiode architecture factory
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quality Miniature proximity sensor module AMS TMD26353M with 940nm IR VCSEL and dual photodiode architecture factory
quality Miniature proximity sensor module AMS TMD26353M with 940nm IR VCSEL and dual photodiode architecture factory
quality Miniature proximity sensor module AMS TMD26353M with 940nm IR VCSEL and dual photodiode architecture factory
>
Specifications
Length:
2mm
Width:
1mm
Operating Temperature:
-30℃~+85℃
Interface:
I2C
Voltage - Supply:
1.7V~2V
Mfr. Part #:
TMD26353M
Package:
SMD-6P
Key Attributes
Model Number: TMD26353M
Product Description

Product Overview

The TMD2635 is a miniature proximity sensor module featuring advanced proximity measurement in a compact 1.0mm x 2.0mm x 0.5mm optical land grid array package. It incorporates a 940nm IR VCSEL and is factory calibrated for IR proximity response. The module provides object detection by sensing reflected IR energy and supports interrupt-driven detect/release events based on threshold settings. It offers wide offset adjustment for unwanted IR energy reflection and automatic ambient light subtraction for improved proximity results. Optimized for small wearable devices, it boasts reduced power consumption with a 1.8V supply and 1.8V IC bus, including a low-power sleep mode (0.7A) with fast wakeup. The dual photodiode architecture and offset emitter/detector package design enable superior proximity detection and offer industrial design flexibility.

Product Attributes

  • Brand: ams OSRAM Group
  • Product Name: TMD2635 Miniature Proximity Sensor Module

Technical Specifications

ParameterMinTypMaxUnitsConditions
Supply voltage (VDD)1.71.82.0VSensor supply voltage
Supply voltage (VDD3)2.93.33.6VIR emitter supply voltage
Operating ambient temperature-3085C
Average power dissipation (PDISS)20mWOver a 1 second period
Sleep state current (IDD)0.7APON = 0, IC bus idle
Active state current (IDD)197340482APON = 1, actively integrating
Idle state current (IDD)30APON = 1, not actively integrating
Interrupt output low voltage (VOL)0.6V6 mA sink current
Leakage current (SDA, SCL, INT)-55A
Input high voltage (VIH)1.26VSCL, SDA input
Input low voltage (VIL)0.54VSCL, SDA input
Wakeup time (TWakeup)100sFrom sleep to active state
Time to IC command ready (TActive)1.5msFrom power-on
Near Proximity Response (Absolute)292389486counts18% reflective surface, 10mm distance
Far Proximity Response (Absolute)250333416counts18% reflective surface, 10mm distance
Near Proximity Part to Part Variation25%
Far Proximity Part to Part Variation25%
Near Proximity Noise2%
Far Proximity Noise2%
Near Proximity Response (No target)193041countsNo target above module
Far Proximity Response (No target)193041countsNo target above module

2411111159_AMS-TMD26353M_C3678690.pdf

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