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quality Ams as5013 iqft integrated hall sensor ic supporting lateral displacement detection up to 2mm radius factory
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quality Ams as5013 iqft integrated hall sensor ic supporting lateral displacement detection up to 2mm radius factory
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Specifications
Out Type:
I2C
Voltage - Supply:
2.7V~3.6V
Operating Temperature:
-20℃~+80℃
Minimum Field:
30mT
Mfr. Part #:
AS5013-IQFT
Package:
QFN-16(4x4)
Key Attributes
Model Number: AS5013-IQFT
Product Description

Product Overview

The AS5013 is a low-power integrated Hall sensor IC designed for human interface applications, particularly in smart navigation key systems. It offers on-chip processing for rapid development cycles, eliminating the need for complex host processor integration. The single-chip IC features 5 Hall sensing elements for detecting lateral displacement up to 2mm, a high-resolution ADC, XY coordinate and motion detection engine, and a smart power management controller. It communicates position coordinates and magnetic field information via a 2-wire IC interface. Ideal for battery-operated devices like mobile phones and smart handheld devices, it supports contactless push-button functionality and motion detection.

Product Attributes

  • Brand: ams OSRAM
  • Product Name: AS5013
  • Package: QFN 4mmx4mmx0.55mm

Technical Specifications

ParameterConditionsMinTypMaxUnitsDescription
Lateral Movement Radiusdx+dy2mmUp to 2mm radius
Resolution (X and Y)8bit8-bit resolution
Current Consumption (Standby)3AAutomatic low-power mode
Operating Voltage2.73.6VCore supply voltage
Peripheral Supply Voltage1.7VDown to 1.7V
IC InterfaceHigh-speed IC interface
Raw Hall Output12bit12-bit raw hall output
PackageQFN 4mmx4mmx0.55mm
Operating Temperature-2080CAmbient temperature range
Storage Temperature-55125C
Power-up Time (Analog)1000sStep on VDD to Data_Ready
Conversion Time (X/Y Coordinate)450sRead X/Y coordinate IC ACK bit to Data_Ready
Wakeup Time (Nominal)20320ms
Magnet Type23mmCylindrical; axial magnetized
Hall Array Diameter2.2mm
Magnetic Field Strength (BZ)Measured at chip surface30120mTVertical magnetic field at magnet center
Maximal Average Current Consumption (IDDs)TAMB = -20C to 50C; Pulsed peaks = IDDf depends on ts[ms]3+3760/tsAOn VDD
Maximal Average Current Consumption (IDDs)TAMB = 50C to 80C; Pulsed peaks = IDDf depends on ts[ms]10+3760/tsAOn VDD
Current Consumption (Idle Mode, no readout)TAMB = -20C to 50C3AOn core supply
Current Consumption (Idle Mode, no readout)TAMB = 50C to 80C10AOn core supply
Current Consumption (Idle Mode, continuous readout)ts = 450s10mAOn core supply
Noise (RMS)C1..C5 channel data100T
Power Supply Rejection Ratio (PSSR)VDD=3.3V; Temp = 25C; dVDD= 100 mVpp at 10.30kHz0.2%/100 mV
High Level Input Voltage (SCL, SDA)IIC0.7 * VDDpV
Low Level Input Voltage (SCL, SDA)IIC0.3 * VDDpV
High Level Input Voltage (ADDR, RESETn)JEDEC0.65 * VDDpV
Low Level Input Voltage (ADDR, RESETn)JEDEC0.35 * VDDpV
Capacitive Load (SDA, Standard mode)100kHz400pF
Capacitive Load (SDA, Fast mode)400kHz400pF
Capacitive Load (SDA, High speed mode)3.4MHz100pF
Capacitive Load (INTn, Standard mode)100kHz30pF

2411220417_AMS-AS5013-IQFT_C19136151.pdf

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