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quality High resolution current sensor Allegro A1366LKTTN-5-T with programmed sensitivity and quiescent voltage output factory
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quality High resolution current sensor Allegro A1366LKTTN-5-T with programmed sensitivity and quiescent voltage output factory
quality High resolution current sensor Allegro A1366LKTTN-5-T with programmed sensitivity and quiescent voltage output factory
quality High resolution current sensor Allegro A1366LKTTN-5-T with programmed sensitivity and quiescent voltage output factory
>
Specifications
Voltage - Supply:
4.5V~5.5V
Mfr. Part #:
A1366LKTTN-5-T
Package:
SIP-4
Key Attributes
Model Number: A1366LKTTN-5-T
Product Description

Product Overview

The Allegro A1366 is a factory-programmable linear Hall-effect current sensor IC designed for high accuracy and resolution in current sensing applications. It features proprietary linearly interpolated temperature compensation technology for virtually flat sensitivity and offset across its operating temperature range. This device is ideal for HEV inverters, DC-to-DC converters, and electric power steering (EPS) systems. The A1366 offers a ratiometric voltage output proportional to the applied magnetic field, with factory-programmed sensitivity and quiescent voltage for accuracy of less than 1% typical over temperature. It incorporates a low-noise amplifier, a low-impedance output stage, and a dynamic offset cancellation technique for industry-leading sensing resolution at a 120 kHz bandwidth. Built-in broken ground wire detection enhances reliability in automotive applications.

Product Attributes

  • Brand: Allegro
  • Certifications: AEC-Q100 automotive qualified
  • Lead-free: Yes
  • Lead plating: 100% matte tin

Technical Specifications

Characteristic Symbol Test Conditions Min. Typ. Max. Unit
Supply Voltage VCC 4.5 5.0 5.5 V
Supply Current ICC No load on VOUT 10 15 mA
Power-On Time tPO TA = 25C, CBYPASS = Open, CL = 1 nF, Sens = 2.5 mV/G, constant magnetic field of 320 G 78 s
Temperature Compensation Power-On Time tTC TA = 150C, CBYPASS = Open, CL= 1 nF, Sens = 2.5 mV/G, constant magnetic field of 320 G 30 s
Undervoltage Lockout (UVLO) Threshold High VUVLOH TA = 25C, VCC rising and device function enabled 4 V
Undervoltage Lockout (UVLO) Threshold Low VUVLOL TA = 25C, VCC falling and device function disabled 3.5 V
UVLO Enable Delay Time tUVLOE TA = 25C, CBYPASS = Open, CL = 1 nF, Sens = 2.5 mV/G, VCC Fall Time (5 V to 3 V) = 1.5 s 64 s
UVLO Disable Delay Time tUVLOD TA = 25C, CBYPASS = Open, CL = 1 nF, Sens = 2.5 mV/G, VCC Recover Time (3 V to 5 V) = 1.5 s 14 s
Power-On Reset Voltage High VPORH TA = 25C, VCC rising 2.6 V
Power-On Reset Voltage Low VPORL TA = 25C, VCC falling 2.3 V
Power-On Reset Release Time tPORR TA = 25C, VCC rising 64 s
Internal Bandwidth BWi Small signal 3 dB, CL = 1 nF, TA = 25C 120 kHz
Propagation Delay Time tPD TA = 25C, magnetic field step of 320 G, CL = 1 nF, Sens = 2.5 mV/G 2.2 s
Rise Time tR TA = 25C, magnetic field step of 320 G, CL = 1 nF, Sens = 2.5 mV/G 3.6 s
Response Time tRESPONSE TA = 25C, magnetic field step of 320 G, CL = 1 nF, Sens = 2.5 mV/G 3.7 s
Output Saturation Voltage (High) VSAT(HIGH) TA = 25C, RL(PULLDWN) = 10 k to GND 4.7 V
Output Saturation Voltage (Low) VSAT(LOW) TA = 25C, RL(PULLUP) = 10 k to VCC 400 mV
Broken Wire Voltage (High) VBRK(HIGH) TA = 25C, RL(PULLUP) = 10 k to VCC VCC V
Broken Wire Voltage (Low) VBRK(LOW) TA = 25C, RL(PULLDWN) = 10 k to GND 100 mV
Noise BN TA = 25C, CL = 1 nF, Bandwidth = BWi 1.1 mGRMS/Hz
DC Output Resistance ROUT 9
Output Load Resistance (Pull-up) RL(PULLUP) VOUT to VCC 4.7 k
Output Load Resistance (Pull-down) RL(PULLDWN) VOUT to GND 4.7 k
Output Load Capacitance CL VOUT to GND 1 10 nF
Output Slew Rate SR Sens = 2.5 mV/G, CL = 1 nF 230 V/ms
Linearity Sensitivity Error LinERR -1 0.25 %
Symmetry Sensitivity Error SymERR -1 0.25 %
Ratiometry Quiescent Voltage Output Error RatERRVOUT(Q) Through supply voltage range (relative to VCC = 5 V) -1 0 1 %
Ratiometry Sensitivity Error RatERRSens Through supply voltage range (relative to VCC = 5 V) 1 %
Operating Ambient Temperature TA 40 150 C
Storage Temperature Tstg 65 165 C
Package Thermal Resistance RJA On 1-layer PCB with exposed copper limited to solder pads 174 C/W
Package Case Thickness 1 mm
Sensitivity (Typ.) Sens (mV/G) A1366LKT-1-T 1 mV/G
Sensitivity (Typ.) Sens (mV/G) A1366LKT-2-T 2.5 mV/G
Sensitivity (Typ.) Sens (mV/G) A1366LKT-5-T 5 mV/G
Sensitivity (Typ.) Sens (mV/G) A1366LKT-10-T 10 mV/G

2304140030_ALLEGRO-A1366LKTTN-5-T_C2654980.pdf

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