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quality programmable linear Hall effect current sensor IC Allegro A1366LKTTF 10 T with temperature compensation factory
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quality programmable linear Hall effect current sensor IC Allegro A1366LKTTF 10 T with temperature compensation factory
quality programmable linear Hall effect current sensor IC Allegro A1366LKTTF 10 T with temperature compensation factory
quality programmable linear Hall effect current sensor IC Allegro A1366LKTTF 10 T with temperature compensation factory
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Specifications
Mfr. Part #:
A1366LKTTF-10-T
Package:
SIP-4
Key Attributes
Model Number: A1366LKTTF-10-T
Product Description

Product Overview

The Allegro A1366 is a factory-programmable linear Hall-effect current sensor IC designed for high accuracy and resolution in current sensing applications. It features proprietary linearly interpolated temperature compensation technology for virtually flat sensitivity and offset across its operating temperature range. This device is ideal for demanding applications such as HEV inverters, DC-to-DC converters, and electric power steering (EPS). With a ratiometric voltage output proportional to the applied magnetic field, it offers industry-leading sensing resolution at a 120 kHz bandwidth. Integrated features like broken ground wire detection and undervoltage lockout enhance reliability in automotive environments.

Product Attributes

  • Brand: Allegro
  • Technology: Linear Hall-effect sensor IC
  • Programming: Factory-programmable
  • Temperature Compensation: Proprietary linearly interpolated temperature compensation
  • Output Type: Ratiometric analog voltage output
  • Certifications: AEC-Q100 automotive qualified
  • Package: 4-pin SIP (suffix KT)
  • Leadform Options: TN (Straight), TH
  • Material: Lead (Pb) free, 100% matte tin leadframe plating

Technical Specifications

Characteristic Symbol Test Conditions Min. Typ. Max. Unit
ELECTRICAL CHARACTERISTICS
Supply Voltage VCC 4.5 5.0 5.5 V
Supply Current ICC No load on VOUT 10 15 mA
Power-On Time tPO TA = 25C, CBYPASS = Open, CL = 1 nF, Sens = 2.5 mV/G, constant magnetic field of 320 G 78 s
Temperature Compensation Power-On Time tTC TA = 150C, CBYPASS = Open, CL= 1 nF, Sens = 2.5 mV/G, constant magnetic field of 320 G 30 s
Undervoltage Lockout (UVLO) Threshold VUVLOH TA = 25C, VCC rising and device function enabled 4 V
Undervoltage Lockout (UVLO) Threshold VUVLOL TA = 25C, VCC falling and device function disabled 3.5 V
UVLO Enable Delay Time tUVLOE TA = 25C, CBYPASS = Open, CL = 1 nF, Sens = 2.5 mV/G, VCC Fall Time (5 V to 3 V) = 1.5 s 64 s
UVLO Disable Delay Time tUVLOD TA = 25C, CBYPASS = Open, CL = 1 nF, Sens = 2.5 mV/G, VCC Recover Time (3 V to 5 V) = 1.5 s 14 s
Power-On Reset Voltage VPORH TA = 25C, VCC rising 2.6 V
Power-On Reset Voltage VPORL TA = 25C, VCC falling 2.3 V
Power-On Reset Release Time tPORR TA = 25C, VCC rising 64 s
Internal Bandwidth BWi Small signal 3 dB, CL = 1 nF, TA = 25C 120 kHz
OUTPUT CHARACTERISTICS
Propagation Delay Time tPD TA = 25C, magnetic field step of 320 G, CL = 1 nF, Sens = 2.5 mV/G 2.2 s
Rise Time tR TA = 25C, magnetic field step of 320 G, CL = 1 nF, Sens = 2.5 mV/G 3.6 s
Response Time tRESPONSE TA = 25C, magnetic field step of 320 G, CL = 1 nF, Sens = 2.5 mV/G 3.7 s
Output Saturation Voltage (High) VSAT(HIGH) TA = 25C, RL(PULLDWN) = 10 k to GND 4.7 V
Output Saturation Voltage (Low) VSAT(LOW) TA = 25C, RL(PULLUP) = 10 k to VCC 400 mV
Broken Wire Voltage (High) VBRK(HIGH) TA = 25C, RL(PULLUP) = 10 k to VCC VCC V
Broken Wire Voltage (Low) VBRK(LOW) TA = 25C, RL(PULLDWN) = 10 k to GND 100 mV
Noise BN TA = 25C, CL = 1 nF, Bandwidth = BWi 1.1 mGRMS/(Hz)
Output Load Resistance (Pull-up) RL(PULLUP) VOUT to VCC 4.7 k
Output Load Resistance (Pull-down) RL(PULLDWN) VOUT to GND 4.7 k
Output Load Capacitance CL VOUT to GND 1 10 nF
ERROR COMPONENTS
Linearity Sensitivity Error LinERR < 0.25 1 %
Symmetry Sensitivity Error SymERR < 0.25 1 %
Ratiometry Quiescent Voltage Output Error RatERRVOUT(Q) Through supply voltage range (relative to VCC = 5 V) 1 0 1 %
Ratiometry Sensitivity Error RatERRSens Through supply voltage range (relative to VCC = 5 V) 1 %
PERFORMANCE CHARACTERISTICS (A1366LKT-1-T)
Sensitivity SensTA Measured using 600 G, TA = 25C 0.975 1 1.025 mV/G
Sensitivity Drift through Temperature Range SensTC TA = 25C to 150C 2.5 0 2.5 %
Sensitivity Drift through Temperature Range SensTC TA = 40C to 25C 2.5 0 2.5 %
Sensitivity Drift Due to Package Hysteresis SensPKG TA = 25C, after temperature cycling, 25C to 150C and back to 25C 1.25 %
Noise VN TA = 25C, CL = 1 nF 3.15 mVP-P
Noise VN TA = 25C, CL = 1 nF 0.5 mVRMS
Quiescent Output Voltage VOUT(Q)TA TA = 25C 2.490 2.500 2.510 V
Quiescent Output Voltage VOUT(Q)HT TA = 25C to 150C 2.490 2.500 2.510 V
Quiescent Output Voltage VOUT(Q)LT TA = 40C to 25C 2.490 2.500 2.510 V
PERFORMANCE CHARACTERISTICS (A1366LKT-2-T)
Sensitivity SensTA Measured using 400 G, TA = 25C 2.437 2.5 2.563 mV/G
Sensitivity Drift through Temperature Range SensTC TA = 25C to 150C 2.5 0 2.5 %
Sensitivity Drift through Temperature Range SensTC TA = 40C to 25C 2.5 0 2.5 %
Sensitivity Drift Due to Package Hysteresis SensPKG TA = 25C, after temperature cycling, 25C to 150C and back to 25C 1.25 %
Noise VN TA = 25C, CL = 1 nF 7.875 mVP-P
Noise VN TA = 25C, CL = 1 nF 1.25 mVRMS
Quiescent Output Voltage VOUT(Q)TA TA = 25C 2.490 2.500 2.510 V
Quiescent Output Voltage VOUT(Q)HT TA = 25C to 150C 2.490 2.500 2.510 V
Quiescent Output Voltage VOUT(Q)LT TA = 40C to 25C 2.490 2.500 2.510 V
PERFORMANCE CHARACTERISTICS (A1366LKT-5-T)
Sensitivity SensTA Measured using 200 G, TA = 25C 4.875 5 5.125 mV/G
Sensitivity Drift through Temperature Range SensTC TA = 25C to 150C 2.5 0 2.5 %
Sensitivity Drift through Temperature Range SensTC TA = 40C to 25C 2.5 0 2.5 %
Sensitivity Drift Due to Package Hysteresis SensPKG TA = 25C, after temperature cycling, 25C to 150C and back to 25C 1.25 %
Noise VN TA = 25C, CL = 1 nF 15.75 mVP-P
Noise VN TA = 25C, CL = 1 nF 2.5 mVRMS
Quiescent Output Voltage VOUT(Q)TA TA = 25C 2.490 2.500 2.510 V
Quiescent Output Voltage VOUT(Q)HT TA = 25C to 150C 2.490 2.500 2.510 V
Quiescent Output Voltage VOUT(Q)LT TA = 40C to 25C 2.490 2.500 2.510 V
PERFORMANCE CHARACTERISTICS (A1366LKT-10-T)
Sensitivity SensTA Measured using 100 G, TA = 25C 9.75 10 10.25 mV/G
Sensitivity Drift through Temperature Range SensTC TA = 25C to 150C 2.5 0 2.5 %
Sensitivity Drift through Temperature Range SensTC TA = 40C to 25C 2.5 0 2.5 %
Sensitivity Drift Due to Package Hysteresis SensPKG TA = 25C, after temperature cycling, 25C to 150C and back to 25C 1.25 %
Noise VN TA = 25C, CL = 1 nF 31.5 mVP-P
Noise VN TA = 25C, CL = 1 nF 5 mVRMS
Quiescent Output Voltage VOUT(Q)TA TA = 25C 2.485 2.500 2.515 V
Quiescent Output Voltage VOUT(Q)HT TA = 25C to 150C 2.485 2.500 2.515 V
Quiescent Output Voltage VOUT(Q)LT TA = 40C to 25C 2.485 2.500 2.515 V
GENERAL CHARACTERISTICS
Operating Ambient Temperature TA 40 150 C
Storage Temperature Tstg 65 165 C
Maximum Junction Temperature TJ(max) 165 C
Package Thermal Resistance RJA On 1-layer PCB with exposed copper limited to solder pads 174 C/W

2401220948_ALLEGRO-A1366LKTTF-10-T_C19761415.pdf

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