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quality AC DC current sensor AKM CQ209D with ultra thin film InAs Quantum Well Hall sensor and fast response time factory
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quality AC DC current sensor AKM CQ209D with ultra thin film InAs Quantum Well Hall sensor and fast response time factory
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Specifications
Voltage - Supply:
4.5V~5.5V
Mfr. Part #:
CQ209D
Package:
SMD
Key Attributes
Model Number: CQ209D
Product Description

Product Overview

The CQ-209D is an open-type current sensor utilizing an ultra-thin film InAs Quantum Well Hall sensor for high-accuracy and high-speed AC/DC current sensing. Its compact AI-Shell package integrates the Hall sensor, magnetic core, and primary conductor, offering space-saving and high reliability. Key features include electrical isolation, 5V single supply operation, ratiometric output, low variation and temperature drift in sensitivity and offset voltage, low noise output, fast response time, and a small-sized surface mount package that is halogen-free. It is suitable for applications requiring precise current monitoring.

Product Attributes

  • Brand: Asahi Kasei Microdevices (AKM)
  • Model: CQ-209D
  • Package Type: AI-Shell, Small-sized surface mount, Halogen free
  • Material: Indium Arsenide (InAs) Quantum Well for Hall sensor, Tin plating for terminals
  • Certifications: RoHS compliant

Technical Specifications

Parameter Symbol Min. Typ. Max. Units Notes
Supply Voltage VDD 4.5 5.0 5.5 V
Output Current IOUT 0.5 mA VOUT
Output Load Capacitance CL 100 pF VOUT
Operating Ambient Temperature Ta -40 90 C
Maximum Primary Current (RMS) IRMSmax -20 20 A Ta=40~90C
Current Consumption IDD 9 mA No Loads
Sensitivity Vh 49.0 50.0 51.0 mV/A
Offset Voltage Vof 2.500 V IIN=0A
Linear Sensing Range INS -41 41 A
Linearity Error -1 1 %F.S.
Rise Response Time tr 1 s IIN 90% VOUT 90%, CL=100pF
Fall Response Time tf 1 s IIN 10% VOUT 10%, CL=100pF
Bandwidth fT 400 kHz -3dB, CL=100pF
Output Noise VNrms 2.1 mVrms
Temperature Drift of Sensitivity at High Temperature Vh-dH 1 % Variation ratio to Vh(Ta=35C), Ta=35~90C
Maximum Temperature Drift of Sensitivity at Low Temperature Vh-dLmax 2 % Variation ratio to Vh(Ta=35C), Ta=40~35C
Maximum Temperature Drift of Offset voltage Vof-dmax 14.5 mV Variation from Vof(Ta=35C), Ta=40~90C, IIN=0A
Ratiometricity Error of Sensitivity Vh-R -1 1 % VDD=4.5V~5.5V
Ratiometricity Error of Offset Voltage Vof-R -1 1 % VDD=4.5V~5.5V, IIN=0A
Primary Conductor Resistance R1 340
Isolation Voltage VINS 2.5 kV AC 50/60Hz, 60s
Isolation Resistance RINS 500 M DC 1kV
Supply Voltage (Absolute Max) VDD -0.3 6 V
Analog Output Current (Absolute Max) IOUT -1 1 mA VOUT
Storage Temperature Tstg -40 125 C

2411271957_AKM-CQ209D_C1574494.pdf

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