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quality Small sized high speed current sensor AKM CQ2235 using quantum well InAs Hall effect sensor technology factory
<
quality Small sized high speed current sensor AKM CQ2235 using quantum well InAs Hall effect sensor technology factory
quality Small sized high speed current sensor AKM CQ2235 using quantum well InAs Hall effect sensor technology factory
>
Specifications
working temperature:
-40℃~+150℃
Current Range:
85A
Voltage - Supply:
2.7V~3.63V
Sensitivity:
15.5mV/A
Mfr. Part #:
CQ2235
Package:
Through Hole
Key Attributes
Model Number: CQ2235
Product Description

Product Overview

The CQ-2235 is a high-speed, small-sized, open-type current sensor that utilizes a Quantum Well ultra-thin film InAs Hall sensor. It provides an analog voltage output proportional to AC/DC current, enabling high-accuracy and high-speed current sensing. The integrated AI-Shell package, combining the Hall sensor, magnetic core, and primary conductor, ensures space-saving design and high reliability. It is suitable for applications requiring electrical isolation between the primary conductor and the sensor signal, operating on a 3.3V single supply.

Product Attributes

  • Brand: Asahi Kasei Microdevices (AKM)
  • Sensor Type: Hall Effect
  • Package Type: AI-Shell
  • Material: Quantum well ultra-thin film InAs (Indium Arsenide) for Hall sensor; Halogen-free
  • Certifications: IEC/UL 60950-1, UL 508, CSA C22.2 No. 14 (IEC 62109 certification pending)
  • RoHS Compliant: Yes

Technical Specifications

Parameter Symbol Conditions Min. Typ. Max. Units Notes
Maximum Primary Current (RMS) IRMSmax -50 50 A
Current Consumption IDD No loads 6.2 9.6 mA
Sensitivity Vh See Figure 5 15.5 mV/A Note 1
Offset Voltage Vof IIN = 0A 1.650 V Note 1
Linear Sensing Range INS -85 85 A
Linearity Error See Figure 5, Figure 6 -1 1 %F.S. Note 1
Rise Response Time tr CL = 100pF, See Figure 9 1 s
Fall Response Time tf CL = 100pF, See Figure 9 1 s
Bandwidth fT -3dB, CL = 100pF 300 kHz
Output Noise VNrms 100Hz to 4MHz 1.2 mVrms Note 2
Temperature Drift of Sensitivity Vh-dmax Ta = 40 to 110C, See Figure 7 0.4 %
Temperature Drift of Offset Voltage Vof-dmax Ta = 40 to 110C, IIN = 0A, See Figure 8 2.5 mV
Ratiometric Error of Sensitivity Vh-R VDD = 2.97V to 3.63V -1 1 % Note 2
Ratiometric Error of Offset Voltage Vof-R VDD = 2.97V to 3.63V, IIN = 0A -0.6 0.6 %F.S. Note 2
Total Accuracy ETO Ta = 40 to 110C, 54A IIN 54A 1.3 %F.S. Note 3
Primary Conductor Resistance R1 100
Isolation Voltage VINS AC 50/60Hz, 60sec 3 kV Note 2
Isolation Resistance RINS DC 1kV 500 M Note 2
Clearance Distance dCL between the primary and the secondary 13.3 mm Note 2
Creepage Distance dCP between the primary and the secondary 13.3 mm Note 2
Supply Voltage VDD Recommended Operating Conditions 2.7 3.3 3.63 V
Analog Output Current IOUT Recommended Operating Conditions -0.5 0.5 mA VOUT pin
Output Load Capacitance CL Recommended Operating Conditions 100 pF VOUT pin
Operating Ambient Temperature Ta Recommended Operating Conditions -40 110 C See Figure 4

Notes:
Note 1: These parameters can drift by the values in 14. Reliability Tests after the reflow and over the lifetime of this product.
Note 2: These parameters are guaranteed by design.
Note 3: Total accuracy ETO is calculated by the equation below. ETO = |100 (Vh_meas 15.5) / 15.5| + |100 (Vof_meas Vof_meas_35) / (15.5 85 2)| + |meas|


2411272100_AKM-CQ2235_C1574473.pdf

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