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quality Quantum well ultra thin film Hall sensor based current sensor AKM CQ209A with analog voltage output factory
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quality Quantum well ultra thin film Hall sensor based current sensor AKM CQ209A with analog voltage output factory
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Specifications
Voltage - Supply:
4.5V~5.5V
Mfr. Part #:
CQ209A
Package:
SMD
Key Attributes
Model Number: CQ209A
Product Description

Product Overview

The CQ-209A is an open-type current sensor utilizing a quantum well ultra-thin film InAs Hall sensor for high-accuracy and high-speed AC/DC current sensing. Its integrated AI-Shell package, containing the Hall sensor, magnetic core, and primary conductor, offers a space-saving and highly reliable solution. The sensor provides an analog voltage output proportional to the measured current, featuring electrical isolation between the primary conductor and the sensor signal, 5V single supply operation, and ratiometric output. It is designed for low variation and low temperature drift in sensitivity and offset voltage, with low noise output and a fast response time, all within a small-sized surface mount package that is halogen-free.

Product Attributes

  • Brand: Asahi Kasei Microdevices (AKM)
  • Sensor Type: Hall sensor
  • Package Type: AI-Shell, Small-sized surface mount
  • Material: Quantum well ultra-thin film InAs (Indium Arsenide) for Hall sensor; Tin (100%) plating for terminals
  • Certifications: RoHS compliant, Halogen free
  • Operation: Bidirectional

Technical Specifications

Parameter Symbol Conditions Min. Typ. Max. Units Notes
Model CQ-209A MS1265-E-05 2013/06
Supply Voltage VDD 4.5 5.0 5.5 V Single supply operation
Maximum Primary Current (RMS) IRMSmax Ta=40~90C -20 20 A
Current Consumption IDD No Loads 9 mA
Sensitivity Vh Ta=25C, VDD=5V 64.7 66.0 67.3 mV/A *
Offset Voltage Vof IIN=0A, Ta=25C, VDD=5V 2.408 2.500 2.592 V *
Linear Sensing Range INS -31.8 31.8 A
Linearity Error -1 1 %F.S. *
Rise Response Time tr IIN 90% VOUT 90%, CL=100pF 1 s typ.
Fall Response Time tf IIN 10% VOUT 10%, CL=100pF 1 s typ.
Bandwidth fT -3dB, CL=100pF 400 kHz
Output Noise VNrms 2.1 mVrms max.
Maximum Temperature Drift of Sensitivity Vh-dmax Ta=35~90C (variation ratio to Vh(Ta=35C)) 1 %
Maximum Temperature Drift of Sensitivity Vh-dmax Ta=40~35C (variation ratio to Vh(Ta=35C)) 2 %
Maximum Temperature Drift of Offset voltage Vof-dmax Ta=40~90C, IIN=0A (variation from Vof(Ta=35C)) 22 mV
Ratiometricity Error of Sensitivity Vh-R VDD=4.5V~5.5V -1 1 % **
Ratiometricity Error of Offset Voltage Vof-R VDD=4.5V~5.5V, IIN=0A -1 1 % **
Primary Conductor Resistance R1 340
Isolation Voltage VINS AC 50/60Hz, 60s 2.5 kV **
Isolation Resistance RINS DC 1kV 500 M **
Operating Ambient Temperature Ta -40 90 C
Storage Temperature Tstg -40 125 C

* These parameters can drift by the values described in Reliability Tests section over the lifetime of the product.
** These characteristics are guaranteed by design.


2411272252_AKM-CQ209A_C1574495.pdf

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