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quality Compact Design Current Sensor AKM CQ2334 Featuring Hall Sensor and AI Shell Package for Space Saving factory
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quality Compact Design Current Sensor AKM CQ2334 Featuring Hall Sensor and AI Shell Package for Space Saving factory
quality Compact Design Current Sensor AKM CQ2334 Featuring Hall Sensor and AI Shell Package for Space Saving factory
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Specifications
Mfr. Part #:
CQ2334
Key Attributes
Model Number: CQ2334
Product Description

Product Overview

The CQ-2334 is an open-type current sensor utilizing a Hall sensor with an ultra-thin film InAs quantum well for high-accuracy and high-speed AC/DC current sensing. Its simple AI-Shell package integrates the Hall sensor, magnetic core, and primary conductor, offering space-saving and high reliability. This bidirectional sensor provides electrical isolation between the primary conductor and the sensor signal, operates on a single 5V supply, and features a ratiometric output with low variation and temperature drift. It is designed for applications requiring precise and fast current measurement.

Product Attributes

  • Brand: Asahi Kasei Microdevices (AKM)
  • Sensor Type: Hall Sensor
  • Package Type: AI-Shell
  • Material: Indium Arsenide (InAs) quantum well for Hall sensor; Halogen free
  • Certifications: IEC/UL 62368-1, UL 508, CSA C22.2 No. 14 (IEC 62109 certification pending)
  • RoHS Compliant: Yes

Technical Specifications

Parameter Symbol Conditions Min. Typ. Max. Units Notes
Supply Voltage VDD 4.5 5.0 5.5 V Single supply operation
Maximum Primary Current (RMS) IRMSmax -50 50 A
Current Consumption IDD No loads 8.3 11 mA
Sensitivity Vh See Figure 5 39.6 40.0 40.4 mV/A Low variation and low temperature drift
Offset Voltage Vof IIN = 0A 2.480 2.500 2.520 V Low variation and low temperature drift
Linear Sensing Range INS -54 54 A
Linearity Error See Figure 5 -1 1 %F.S.
Rise Response Time tr CL = 100pF, See Figure 8 1 s Fast response time
Fall Response Time tf CL = 100pF, See Figure 8 1 s Fast response time
Bandwidth fT -3dB, CL = 100pF 300 kHz
Output Noise VNrms 100Hz to 4MHz 1.2 mVrms Low noise output
Temperature Drift of Sensitivity Vh-dmax Ta = 40 to 110C, See Figure 6 -1.6 +0.5 %
Temperature Drift of Offset Voltage Vof-dmax Ta = 40 to 110C, IIN = 0A, See Figure 7 -7 +7 mV
Ratiometric Error of Sensitivity Vh-R VDD = 4.5V to 5.5V -1 1 %
Ratiometric Error of Offset Voltage Vof-R VDD = 4.5V to 5.5V, IIN = 0A -0.5 0.5 %F.S.
Total Accuracy ETO Ta = 40 to 110C 1.8 %F.S. Calculated based on sensitivity, offset voltage, and linearity error
Primary Conductor Resistance R1 100
Isolation Voltage VINS AC 50/60Hz, 60sec 3 kV Electrical isolation
Isolation Resistance RINS DC 1kV 500 M Electrical isolation
Clearance Distance dCL between primary and secondary 13.3 mm
Creepage Distance dCP between primary and secondary 13.3 mm
Operating Ambient Temperature Ta -40 110 C
Storage Temperature Tstg -40 150 C Absolute Maximum Rating
Supply Voltage (Absolute Max) VDD -0.3 6.5 V Absolute Maximum Rating
Analog Output Current (Absolute Max) IOUT -1 1 mA Absolute Maximum Rating

2410301848_AKM-CQ2334_C20425043.pdf

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