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quality Open type Hall effect current sensor AKM CQ2063 with quantum well InAs sensor and low offset voltage factory
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quality Open type Hall effect current sensor AKM CQ2063 with quantum well InAs sensor and low offset voltage factory
quality Open type Hall effect current sensor AKM CQ2063 with quantum well InAs sensor and low offset voltage factory
>
Specifications
Voltage - Supply:
4.5V~5.5V
Mfr. Part #:
CQ2063
Package:
Through Hole
Key Attributes
Model Number: CQ2063
Product Description

Product Overview

The CQ-2063 is an open-type current sensor utilizing a Hall effect sensor to provide an analog voltage output proportional to AC/DC current. It features a quantum well ultra-thin film InAs Hall sensor for high-accuracy and high-speed sensing. The integrated AI-Shell package, containing the Hall sensor, magnetic core, and primary conductor, ensures space-saving design and high reliability. This bidirectional sensor offers electrical isolation between the primary conductor and the sensor signal, operates on a single 5V supply, and provides a ratiometric output. It is designed for low variation and low temperature drift of sensitivity and offset voltage, with low noise output and a fast response time. The device is housed in a small-sized, halogen-free package.

Product Attributes

  • Brand: Asahi Kasei Microdevices (AKM)
  • Sensor Type: Hall Effect
  • Package: AI-Shell, Small-sized, Halogen-free
  • Certifications: RoHS compliant (implied by halogen-free and tin plating)

Technical Specifications

Parameter Symbol Min. Typ. Max. Units Notes
Model CQ-2063
Supply Voltage VDD 4.5 5.0 5.5 V Single supply operation
Maximum Primary Current (RMS) IRMSmax -50 50 A
Current Consumption IDD 9 mA No Loads
Sensitivity Vh 58.8 60.0 61.2 mV/A *
Offset Voltage Vof 2.408 2.592 V IIN=0A, *
Linear Sensing Range INS -35 35 A
Linearity Error -1 1 %F.S. *
Rise Response Time tr 1 s CL=100pF, IIN 90% VOUT 90%
Fall Response Time tf 1 s CL=100pF, IIN 10% VOUT 10%
Bandwidth fT 400 kHz -3dB, CL=100pF
Output Noise VNrms 2.1 mVrms **
Max. Temp. Drift of Sensitivity Vh-dmax 1 % Variation ratio to Vh(Ta=35C), Ta=35~90C
Max. Temp. Drift of Sensitivity Vh-dmax 2 % Variation ratio to Vh(Ta=35C), Ta=40~35C
Max. Temp. Drift of Offset Voltage Vof-dmax 21.5 mV From Vof(Ta=35C), Ta=40~90C, IIN=0A
Ratiometricity Error of Sensitivity Vh-R -1 1 % **
Ratiometricity Error of Offset Voltage Vof-R -1 1 % IIN=0A, **
Primary Conductor Resistance R1 100
Isolation Voltage VINS 2.5 kV AC 50/60Hz, 60s, **
Isolation Resistance RINS 500 M DC 1kV, **
Storage Temperature Tstg -40 125 C
Operating Ambient Temperature Ta -40 90 C

* These parameters can drift by the values described in the Reliability Tests section over the lifetime of the product.
** These characteristics are guaranteed by design.


2411280111_AKM-CQ2063_C1526344.pdf

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