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quality current sensor AKM CQ209B featuring quantum well ultra thin film InAs Hall sensor and electrical isolation factory
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quality current sensor AKM CQ209B featuring quantum well ultra thin film InAs Hall sensor and electrical isolation factory
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Specifications
Voltage - Supply:
4.5V~5.5V
Mfr. Part #:
CQ209B
Package:
SMD
Key Attributes
Model Number: CQ209B
Product Description

Product Overview

The CQ-209B is an open-type current sensor that utilizes a quantum well ultra-thin film InAs Hall sensor to provide high-accuracy and high-speed AC/DC current sensing. Its analog voltage output is directly proportional to the measured current. The integrated AI-Shell package, containing the Hall sensor, magnetic core, and primary conductor, ensures a space-saving and highly reliable solution. Key features include electrical isolation, 5V single supply operation, ratiometric output, low variation in sensitivity and offset voltage, low noise, and a fast response time. It is suitable for applications requiring precise and rapid current monitoring.

Product Attributes

  • Brand: Asahi Kasei Microdevices (AKM)
  • Sensor Type: Hall Sensor
  • Hall Element Material: Quantum well ultra-thin film InAs (Indium Arsenide)
  • Package Type: AI-Shell, Surface Mount
  • Certifications: RoHS compliant, Halogen free
  • Lead Finish: 100% Tin

Technical Specifications

Parameter Symbol Min. Typ. Max. Units Notes
Model CQ-209B
Supply Voltage VDD 4.5 5.0 5.5 V
Output Current IOUT -0.5 0.5 mA VOUT
Output Load Capacitance CL 100 pF VOUT
Operating Ambient Temperature Ta -40 90 C
Maximum Primary Current (RMS) IRMSmax -20 0 A Ta=40~90C
Current Consumption IDD 9 mA No Loads
Sensitivity Vh 112.7 115.0 117.3 mV/A *
Offset Voltage Vof 4.440 4.550 4.660 V IIN=0A *
Linear Sensing Range INS -35 0 A
Linearity Error -1 1 %F.S. *
Rise Response Time tr 1 s IIN 90% VOUT 90%, CL=100pF
Fall Response Time tf 1 s IIN 10% VOUT 10%, CL=100pF
Output Noise VNrms 2.1 mVrms **
Maximum Temperature Drift of Sensitivity Vh-dmax 1 % Variation ratio to Vh(Ta=35C), Ta=35~90C
2 % Variation ratio to Vh(Ta=35C), Ta=40~35C
Maximum Temperature Drift of Offset voltage Vof-dmax 30 mV Variation from Vof(Ta=35C), Ta=40~90C, IIN=0A
Ratiometricity Error of Sensitivity Vh-R -1 1 % VDD=4.5V~5.5V **
Ratiometricity Error of Offset Voltage Vof-R -1 1 % VDD=4.5V~5.5V, IIN=0A **
Primary Conductor Resistance R1 340
Isolation Voltage VINS 2.5 kV AC 50/60Hz, 60s **
Isolation Resistance RINS 500 M DC 1kV **
Storage Temperature Tstg -40 125 C

* These parameters can drift by the values described in Reliability Tests section over the lifetime of the product.
** These characteristics are guaranteed by design.


2411261522_AKM-CQ209B_C1574496.pdf

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